JPH02126686A - Amorphous semiconductor solar cell - Google Patents
Amorphous semiconductor solar cellInfo
- Publication number
- JPH02126686A JPH02126686A JP63280079A JP28007988A JPH02126686A JP H02126686 A JPH02126686 A JP H02126686A JP 63280079 A JP63280079 A JP 63280079A JP 28007988 A JP28007988 A JP 28007988A JP H02126686 A JPH02126686 A JP H02126686A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous semiconductor
- film
- solar cell
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 37
- 239000011247 coating layer Substances 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 14
- 239000010935 stainless steel Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101150000971 SUS3 gene Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、非晶質半導体により形成されたいわゆる非晶
質半導体太陽電池に関し、特に、金属基板を用いて形成
された非晶質半導体太陽電池に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a so-called amorphous semiconductor solar cell formed using an amorphous semiconductor, and in particular to an amorphous semiconductor solar cell formed using a metal substrate. Regarding batteries.
［従来の技術］
いわゆる非晶質半導体太陽電池は、従来から可撓性を得
るために、ステンレス等の金属基板を用いて製造するこ
とが提案されており、この様な金属基板を用いた非晶質
半導体太陽電池の一般的な構成を、第１図によりその製
造方法に従って説明すると、次の通りである。[Prior Art] It has been proposed that so-called amorphous semiconductor solar cells be manufactured using metal substrates such as stainless steel in order to obtain flexibility. The general structure of a crystalline semiconductor solar cell will be described below with reference to FIG. 1 and its manufacturing method.
まず、可撓性を有するステンレス等の金ａＭ板１０表面
に絶縁被膜層６を設けて絶縁化し、この上にステンレス
等の金属を形成し、背面電極２を形成する。さらに、非
晶質シリコン層３をＰ型、■型、Ｎ型あるいはＮ型、■
型、Ｐ型の順に形成し、この上に酸化インジウムスズ等
の透明導電膜４を形成する。最後に、上記の膜全体を透
明な保護膜５で覆う。First, an insulating film layer 6 is provided on the surface of a flexible gold aM plate 10 made of stainless steel or the like to insulate it, and a metal such as stainless steel is formed thereon to form the back electrode 2. Furthermore, the amorphous silicon layer 3 is made of P type, ■ type, N type, or N type.
A type and a P type are formed in this order, and a transparent conductive film 4 made of indium tin oxide or the like is formed thereon. Finally, the entire film is covered with a transparent protective film 5.
従来、このステンレス基板１の絶総化は、あらかじめ表
面研石したステンレス基板上にポリイミド樹脂を塗布し
て焼付け、耐熱性樹脂層を形成することにより行なわれ
ており、場合によっては、この樹脂層の上に酸化珪素、
酸化チタン等の無機絶縁膜を真空蒸着法等により薄く形
成していた。Conventionally, this stainless steel substrate 1 has been completely integrated by applying polyimide resin on a stainless steel substrate whose surface has been polished in advance and baking it to form a heat-resistant resin layer. silicon oxide on top of
A thin inorganic insulating film such as titanium oxide was formed using a vacuum evaporation method.
上記絶縁被膜層６を二層に形成するのは、これを樹脂層
のみを形成した場合、この樹脂層とこの上に形成される
背面電極や半導体層との間に強い密着性が得られず、曲
げ等に伴って内部に発生する応力により、容易に破損、
Ｔｊ離してしまい、さらに、加熱時に樹脂から発生する
ガス等がこの上に積層された非晶質半導体層に悪影響を
与え、特性を劣化させることがあったためであった。The reason why the insulating coating layer 6 is formed into two layers is because if only a resin layer is formed, strong adhesion cannot be obtained between this resin layer and the back electrode or semiconductor layer formed thereon. , easily damaged due to stress generated internally due to bending, etc.
This is because the Tj is separated, and furthermore, gas generated from the resin during heating may have an adverse effect on the amorphous semiconductor layer laminated thereon, resulting in deterioration of characteristics.
［発明が解決しようとする課題］
しかし、上記のようにして絶縁層１摸層６を二重構造と
した場合においても、樹脂層と無機絶縁層との密着性が
必ずしも充分ではないため、曲げや湿度等の影響を受け
て剥離し、また、無機絶縁層が樹脂層から発生するガス
による非晶質半導体層への影響を完全に押さえることは
できない。[Problems to be Solved by the Invention] However, even when the insulating layer 1 and the inorganic insulating layer 6 have a double structure as described above, the adhesion between the resin layer and the inorganic insulating layer is not necessarily sufficient. In addition, the inorganic insulating layer cannot completely suppress the influence of gas generated from the resin layer on the amorphous semiconductor layer.
このため、この上に非晶質半導体層を形成して太陽電池
とした場合、その変換効率が低下し、好ましい特性が得
られない、歩留りが悪いなどの問題があった。For this reason, when an amorphous semiconductor layer is formed on top of this to form a solar cell, there are problems such as a decrease in conversion efficiency, failure to obtain desirable characteristics, and poor yield.
そこで、本発明の目的は、上記問題点が解決された非晶
質半導体太陽電池を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an amorphous semiconductor solar cell in which the above-mentioned problems are solved.
〔課題を解決するための手段］
すなわち、上記の本発明の目的は、金属基板１の上に絶
縁被膜層６、背面電極２、非晶質半導体層３、保護膜層
４を順次形成して成る非晶質半導体太陽電池において、
前記絶縁被膜層６が、膜厚３〜１２μｍの有機シリケー
トを主成分とするコーティング剤を硬化させたノリ力被
膜から成ることを特徴とする非晶質半導体太陽電池によ
って達成される。[Means for Solving the Problems] That is, the object of the present invention described above is to form an insulating film layer 6, a back electrode 2, an amorphous semiconductor layer 3, and a protective film layer 4 in sequence on a metal substrate 1. In an amorphous semiconductor solar cell consisting of
This is achieved by an amorphous semiconductor solar cell characterized in that the insulating coating layer 6 is made of a glue coating formed by curing a coating agent containing organic silicate as a main component and having a thickness of 3 to 12 μm.
［作 用コ
上記の非晶質半導体太陽電池によれば、金属基板１の表
面を覆う絶縁被膜層６に、膜厚３〜１２μｍの有機シリ
ケートを主成分とするコーティング剤を硬化させたシリ
カ被膜を用いることによって、従来技術の課題であった
絶縁被膜層６とこの上に形成される背面電極２や非晶質
半導体層３との間の密着性をより強固なものにし、曲げ
や湿度等により剥離が生じることな抑えることが可能に
なった。[Function] According to the above-mentioned amorphous semiconductor solar cell, the insulating coating layer 6 covering the surface of the metal substrate 1 is coated with a silica coating having a thickness of 3 to 12 μm and having a hardened coating agent mainly composed of organic silicate. By using this, the adhesion between the insulating coating layer 6 and the back electrode 2 and the amorphous semiconductor layer 3 formed thereon, which was a problem with the prior art, is strengthened, and it is possible to prevent bending, humidity, etc. This makes it possible to prevent peeling.
さらに従来では、加熱時に樹脂層から発生していたガス
等によりこの上に積層された非晶質半導体に悪ｉ Ｗを
与え、変換効率の低下を引き起こす等、その特性を劣化
させていたが、本発明においては、樹脂層を用いず、有
機シリケートを硬化させたシリカ被膜からなる単一膜を
用いて絶縁被膜層６の密着性を高めたことにより、上記
原因による変換効率の低下を防ぐことができる。Furthermore, in the past, gases generated from the resin layer during heating gave harmful iW to the amorphous semiconductor layered thereon, causing a reduction in conversion efficiency and deteriorating its characteristics. In the present invention, the adhesion of the insulating coating layer 6 is improved by using a single film made of a silica coating made of hardened organic silicate without using a resin layer, thereby preventing a decrease in conversion efficiency due to the above-mentioned causes. Can be done.
なお、ここで上記絶縁被膜層６の膜厚を３〜１２μｍと
したのは、後述するように、膜厚が１３μｍより厚くな
るとクラックや剥離が発生しやすくなり、また、３μｍ
より薄（なるとステンレス表面の絶縁化が不十分となる
ためである。The reason why the thickness of the insulating coating layer 6 is set to 3 to 12 μm is because, as will be described later, if the thickness is thicker than 13 μm, cracks and peeling will easily occur.
This is because the thinner the stainless steel surface becomes, the less insulated the stainless steel surface becomes.
［実 施 例コ
以下、本発明の実施例について、添付の図面を参照にし
ながら説明する。[Embodiments] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.
（実施例１）
まず、第１図において、金属基板ｌとして厚さ０．１ｍ
ｍ５ 表面粗さ０．５μｍのステンレス板（ＳＵＳ３
０４）を用いた。また、水１２ｇとブチルアルコール５
０ｇとテトラエトキンシラン１００ｇと塩化錫１ｇとを
混合し、エチルシリケートを基剤とするコーティング剤
を得た。(Example 1) First, in FIG. 1, the metal substrate l has a thickness of 0.1 m.
m5 Stainless steel plate (SUS3) with a surface roughness of 0.5μm
04) was used. Also, 12g of water and 5g of butyl alcohol.
0 g, 100 g of tetraethquinsilane, and 1 g of tin chloride were mixed to obtain a coating agent based on ethyl silicate.
前記ステンレス基板上に、前記コーティング剤を塗布し
、これを１００℃で予備乾燥した後、３００℃で２０分
間焼成し焼き付け、膜厚が１゜０μｍ−１５μｍの範囲
で各々異なる絶縁被膜層６を有する絶縁化されたステン
レス基板な得た。The coating agent is applied onto the stainless steel substrate, pre-dried at 100°C, and then baked at 300°C for 20 minutes to form different insulating coating layers 6 with film thicknesses in the range of 1°0 μm to 15 μm. An insulated stainless steel substrate was obtained.
次いで既知の方法により、上記絶縁被膜層６上に非晶質
半導体太陽電池を形成した。すなわち、背面電極２とし
て膜厚５０００オングストロームのステンレス膜をスッ
パタ法により形成し、続けてグロー放電法（プラズマＣ
ＶＤ法）により非晶質半導体層３をＰ型層、■型層、Ｎ
型層の順に積層した。すなわち、Ｐ型層は、ＳｉＨ４と
Ｂ ２ Ｈ６を用い、約５００オングストロームの膜厚
に、■型層は５ｉＨｚのみを用いて約５００オングスト
ロームの膜厚に、Ｎ型層はＳｉＨ４とＰ Ｈ３を用いて
約１００オングストロームの膜厚に、それぞれ形成した
。Next, an amorphous semiconductor solar cell was formed on the insulating coating layer 6 by a known method. That is, a stainless steel film with a thickness of 5000 angstroms was formed as the back electrode 2 by a sputtering method, and then a glow discharge method (plasma carbon
VD method), the amorphous semiconductor layer 3 is formed into a P-type layer, a ■-type layer, and an N-type layer.
The mold layers were laminated in order. That is, the P-type layer uses SiH4 and B 2 H6 and has a thickness of about 500 angstroms, the ■-type layer uses only 5iHz and has a thickness of about 500 angstroms, and the N-type layer uses SiH4 and P H3 and has a thickness of about 500 angstroms. Each layer was formed to a thickness of about 100 angstroms.
さらに、この上に透明電極４として酸化インジウムスズ
を約７００オングストロームの厚さに形成した。最後に
透明なフッ素樹脂を全体に塗布し、保護膜層５を形成し
た。Furthermore, indium tin oxide was formed on this as a transparent electrode 4 to a thickness of about 700 angstroms. Finally, a transparent fluororesin was applied to the entire surface to form a protective film layer 5.
こうしてステンレス基板上に設けられたｔＱ ｉＪ被膜
層の膜厚が１．０μｍ〜１５μｍの範囲で異なる受光面
積１ｃｍ２の非晶質半導体太陽電池を各々１０，０００
個ずつ作り、これらの絶縁被膜層６の膜厚と製品の歩留
りの関係を調べ、その結果を第２図に示した。In this way, 10,000 amorphous semiconductor solar cells each having a light-receiving area of 1 cm2 and having different thicknesses of tQ iJ coating layers in the range of 1.0 μm to 15 μm were fabricated on stainless steel substrates.
The relationship between the thickness of the insulating coating layer 6 and the yield of the product was investigated, and the results are shown in FIG.
この図より高い歩留りを得るためには、絶縁被膜層６の
膜厚を、５μｍ−１２μｍとすることが必要であること
がわかる。これは、膜厚が１３μｍより厚（なるとクラ
ックや剥離が発生しやすくなるため、絶１縁性が低下し
、絶縁被膜層としては使えず、また、５μｍより薄くな
った場合も、ステンレス表面の絶縁化が不十分となるた
めである。From this figure, it can be seen that in order to obtain a higher yield, it is necessary to set the thickness of the insulating coating layer 6 to 5 μm to 12 μm. This means that if the film is thicker than 13 μm, cracks and peeling will occur more easily, so the insulation properties will be lowered and it cannot be used as an insulating coating layer. This is because insulation becomes insufficient.
（実施例２）
金属基板１として、厚さＯ，１ｍｍ５ 表面粗さ０．
１５μｍのステンレス基板を用いた以外は、実施例１と
同様にして非晶質半導体太陽電池を製作した。また、同
様にしてこの太陽電池における絶縁被膜層６の膜厚と歩
留りの関係を第２図に示す。(Example 2) The metal substrate 1 has a thickness of O, 1 mm5 and a surface roughness of 0.
An amorphous semiconductor solar cell was manufactured in the same manner as in Example 1 except that a 15 μm stainless steel substrate was used. Similarly, FIG. 2 shows the relationship between the thickness of the insulating coating layer 6 and the yield in this solar cell.
この図より高い歩留りを得るためには、絶縁被膜層６の
膜厚を、３μｍ〜１２μｍとすることが必要であること
がわかる。From this figure, it can be seen that in order to obtain a higher yield, it is necessary to set the thickness of the insulating coating layer 6 to 3 μm to 12 μm.
この場合に、絶縁被膜層の膜厚が実施例１の場合より薄
くても高い歩留りが得られたのは、ステンレス基板の表
面粗さが小さいためと考えられる。In this case, the reason why a high yield was obtained even though the thickness of the insulating coating layer was thinner than in Example 1 is thought to be because the surface roughness of the stainless steel substrate was small.
［発明の効果コ
以上の説明からも明かなように、金属基板表面を覆う絶
縁被膜層にシリカ被膜を用い、その膜厚を３μｍ〜１２
μｍとすることにより高い歩留りをもって製品の生産が
でき、その変換効率の高い非晶質半導体太陽電池が提供
できる。[Effects of the invention] As is clear from the above explanation, a silica film is used as the insulating film layer covering the surface of the metal substrate, and the film thickness is 3 μm to 12 μm.
By using μm, products can be produced with a high yield, and an amorphous semiconductor solar cell with high conversion efficiency can be provided.
第１図は、非晶質半導体太陽電池の構造を示す一部切欠
の模式斜視図であり、第２図は、本発明の実施例１及び
実施例２における上記太陽電池の絶縁被膜層の膜厚と歩
留りとの関係を示すグラフである。
１・・・金属基板 ２・・・背面電極 ３・・・非晶質
半導体層 ４・・・透明電極 ５・・・保護膜 ６・・
・絶縁被膜層
特許出願人 太陽誘電株式会社
代 理 人 弁理士 北條 和由FIG. 1 is a partially cutaway schematic perspective view showing the structure of an amorphous semiconductor solar cell, and FIG. 2 is a film of an insulating coating layer of the solar cell in Example 1 and Example 2 of the present invention. It is a graph showing the relationship between thickness and yield. 1... Metal substrate 2... Back electrode 3... Amorphous semiconductor layer 4... Transparent electrode 5... Protective film 6...
・Insulating coating layer patent applicant Taiyo Yuden Co., Ltd. Representative Patent attorney Kazuyoshi Hojo
Claims (1)
保護膜層を順次形成して成る非晶質半導体太陽電池にお
いて、前記絶縁被膜層が、膜厚３〜１２μｍの有機シリ
ケートを主成分とするコーティング剤を硬化させたシリ
カ被膜から成ることを特徴とする非晶質半導体太陽電池
。Insulating coating layer, back electrode, amorphous semiconductor layer,
An amorphous semiconductor solar cell formed by sequentially forming protective film layers, characterized in that the insulating film layer is made of a silica film obtained by curing a coating agent containing organic silicate as a main component and having a thickness of 3 to 12 μm. Amorphous semiconductor solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63280079A JPH07105516B2 (en) | 1988-11-05 | 1988-11-05 | Amorphous semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63280079A JPH07105516B2 (en) | 1988-11-05 | 1988-11-05 | Amorphous semiconductor solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02126686A true JPH02126686A (en) | 1990-05-15 |
| JPH07105516B2 JPH07105516B2 (en) | 1995-11-13 |
Family
ID=17620016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63280079A Expired - Lifetime JPH07105516B2 (en) | 1988-11-05 | 1988-11-05 | Amorphous semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105516B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011204723A (en) * | 2010-03-24 | 2011-10-13 | Nisshin Steel Co Ltd | Stainless steel plate for use of solar cell substrate material, and method of manufacturing the same |
| JP2014107510A (en) * | 2012-11-29 | 2014-06-09 | Showa Shell Sekiyu Kk | Compound thin film solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56152275A (en) * | 1980-04-25 | 1981-11-25 | Teijin Ltd | Thin film type solar cell |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
-
1988
- 1988-11-05 JP JP63280079A patent/JPH07105516B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56152275A (en) * | 1980-04-25 | 1981-11-25 | Teijin Ltd | Thin film type solar cell |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011204723A (en) * | 2010-03-24 | 2011-10-13 | Nisshin Steel Co Ltd | Stainless steel plate for use of solar cell substrate material, and method of manufacturing the same |
| JP2014107510A (en) * | 2012-11-29 | 2014-06-09 | Showa Shell Sekiyu Kk | Compound thin film solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105516B2 (en) | 1995-11-13 |
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