JPS5615079A - Insulated gate field effect transistor couple - Google Patents

Insulated gate field effect transistor couple

Info

Publication number
JPS5615079A
JPS5615079A JP9078679A JP9078679A JPS5615079A JP S5615079 A JPS5615079 A JP S5615079A JP 9078679 A JP9078679 A JP 9078679A JP 9078679 A JP9078679 A JP 9078679A JP S5615079 A JPS5615079 A JP S5615079A
Authority
JP
Japan
Prior art keywords
misfet
conductors
field effect
unitary
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9078679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148793B2 (de
Inventor
Tamio Murano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9078679A priority Critical patent/JPS5615079A/ja
Publication of JPS5615079A publication Critical patent/JPS5615079A/ja
Publication of JPS6148793B2 publication Critical patent/JPS6148793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP9078679A 1979-07-16 1979-07-16 Insulated gate field effect transistor couple Granted JPS5615079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9078679A JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9078679A JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Publications (2)

Publication Number Publication Date
JPS5615079A true JPS5615079A (en) 1981-02-13
JPS6148793B2 JPS6148793B2 (de) 1986-10-25

Family

ID=14008272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9078679A Granted JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Country Status (1)

Country Link
JP (1) JPS5615079A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04184797A (ja) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp ピークホールド回路
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
JPH0645530A (ja) * 1984-01-23 1994-02-18 Internatl Rectifier Corp 双方向導通絶縁ゲート電界効果トランジスタ
US5663587A (en) * 1987-06-01 1997-09-02 Mitsubishi Denki Kabushiki Kaisha Field effect transistor of high breakdown voltage type having stable electrical characteristics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645530A (ja) * 1984-01-23 1994-02-18 Internatl Rectifier Corp 双方向導通絶縁ゲート電界効果トランジスタ
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5663587A (en) * 1987-06-01 1997-09-02 Mitsubishi Denki Kabushiki Kaisha Field effect transistor of high breakdown voltage type having stable electrical characteristics
JPH04184797A (ja) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp ピークホールド回路

Also Published As

Publication number Publication date
JPS6148793B2 (de) 1986-10-25

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