JPS5615036A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5615036A JPS5615036A JP9206579A JP9206579A JPS5615036A JP S5615036 A JPS5615036 A JP S5615036A JP 9206579 A JP9206579 A JP 9206579A JP 9206579 A JP9206579 A JP 9206579A JP S5615036 A JPS5615036 A JP S5615036A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- semiconductor device
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To enhance the withstand voltage of a semiconductor device between the source and the drain thereof and increase the threshold value of a parasitic MOS transistor by forming an insulating film containing the same conductivity impurity as a substrate on a region to form a field oxide film thereon. CONSTITUTION:An SiO2 film 21 is formed on an Si substrate 20, and an oxidation preventive Si3N4 film 22 is formed thereon. Then, a photoresist film 23 is coated as a mask, and SiO2 film 21 and Si3N4 film 22 are removed. Subsequently, the film 23 is removed, an SiO2 film 24 including boron is formed, and is thereafter heat treated in oxidizable atmosphere. In this manner, a boron diffused region 25 is formed in the opening of the mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9206579A JPS5615036A (en) | 1979-07-19 | 1979-07-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9206579A JPS5615036A (en) | 1979-07-19 | 1979-07-19 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5615036A true JPS5615036A (en) | 1981-02-13 |
| JPS621266B2 JPS621266B2 (en) | 1987-01-12 |
Family
ID=14044065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9206579A Granted JPS5615036A (en) | 1979-07-19 | 1979-07-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5615036A (en) |
-
1979
- 1979-07-19 JP JP9206579A patent/JPS5615036A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS621266B2 (en) | 1987-01-12 |
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