JPS56146276A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS56146276A
JPS56146276A JP2491480A JP2491480A JPS56146276A JP S56146276 A JPS56146276 A JP S56146276A JP 2491480 A JP2491480 A JP 2491480A JP 2491480 A JP2491480 A JP 2491480A JP S56146276 A JPS56146276 A JP S56146276A
Authority
JP
Japan
Prior art keywords
impurity density
channel region
film thickness
tox
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2491480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626670B2 (enrdf_load_stackoverflow
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2491480A priority Critical patent/JPS56146276A/ja
Publication of JPS56146276A publication Critical patent/JPS56146276A/ja
Publication of JPS626670B2 publication Critical patent/JPS626670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
JP2491480A 1980-02-29 1980-02-29 Insulating gate type field-effect transistor Granted JPS56146276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2491480A JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2491480A JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS56146276A true JPS56146276A (en) 1981-11-13
JPS626670B2 JPS626670B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=12151428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491480A Granted JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56146276A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (ja) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト 高耐電圧ｍｏｓトランジスタ
JPS59107560A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体集積回路装置
JPS6010780A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102846406B1 (ko) * 2023-08-09 2025-08-14 주식회사 유니온 저온 소성용 클링커 광화제 조성물 및 그 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (ja) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト 高耐電圧ｍｏｓトランジスタ
JPS59107560A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体集積回路装置
JPS6010780A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS626670B2 (enrdf_load_stackoverflow) 1987-02-12

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