JPS56130940A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130940A
JPS56130940A JP3364680A JP3364680A JPS56130940A JP S56130940 A JPS56130940 A JP S56130940A JP 3364680 A JP3364680 A JP 3364680A JP 3364680 A JP3364680 A JP 3364680A JP S56130940 A JPS56130940 A JP S56130940A
Authority
JP
Japan
Prior art keywords
oxide film
forming region
oxide
field oxide
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3364680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310898B2 (cg-RX-API-DMAC10.html
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3364680A priority Critical patent/JPS56130940A/ja
Publication of JPS56130940A publication Critical patent/JPS56130940A/ja
Publication of JPS6310898B2 publication Critical patent/JPS6310898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP3364680A 1980-03-17 1980-03-17 Manufacture of semiconductor device Granted JPS56130940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3364680A JPS56130940A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3364680A JPS56130940A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130940A true JPS56130940A (en) 1981-10-14
JPS6310898B2 JPS6310898B2 (cg-RX-API-DMAC10.html) 1988-03-10

Family

ID=12392201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3364680A Granted JPS56130940A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130940A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127344A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体装置の製造方法
JPS58145145A (ja) * 1982-02-22 1983-08-29 Mitsubishi Electric Corp 半導体装置の素子間分離絶縁膜の形成方法
JPH02119137A (ja) * 1988-10-27 1990-05-07 Nec Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127344A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体装置の製造方法
JPS58145145A (ja) * 1982-02-22 1983-08-29 Mitsubishi Electric Corp 半導体装置の素子間分離絶縁膜の形成方法
JPH02119137A (ja) * 1988-10-27 1990-05-07 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6310898B2 (cg-RX-API-DMAC10.html) 1988-03-10

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