JPS56130930A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130930A
JPS56130930A JP3502080A JP3502080A JPS56130930A JP S56130930 A JPS56130930 A JP S56130930A JP 3502080 A JP3502080 A JP 3502080A JP 3502080 A JP3502080 A JP 3502080A JP S56130930 A JPS56130930 A JP S56130930A
Authority
JP
Japan
Prior art keywords
substrate
liquid
pattern
dipped
emitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3502080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247852B2 (https=
Inventor
Kazufumi Ogawa
Atsushi Shibata
Shigeru Watari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3502080A priority Critical patent/JPS56130930A/ja
Publication of JPS56130930A publication Critical patent/JPS56130930A/ja
Publication of JPH0247852B2 publication Critical patent/JPH0247852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
JP3502080A 1980-03-18 1980-03-18 Manufacture of semiconductor device Granted JPS56130930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3502080A JPS56130930A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502080A JPS56130930A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130930A true JPS56130930A (en) 1981-10-14
JPH0247852B2 JPH0247852B2 (https=) 1990-10-23

Family

ID=12430375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502080A Granted JPS56130930A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130930A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016051737A (ja) * 2014-08-28 2016-04-11 国立大学法人九州大学 不純物導入方法及び半導体素子の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178185A (https=) * 1974-12-28 1976-07-07 Mitsubishi Electric Corp
JPS51125698A (en) * 1975-04-03 1976-11-02 Mitsubishi Electric Corp The formation of silicon dioxide film
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
JPS53116781A (en) * 1977-03-22 1978-10-12 Nec Corp Selective anodic oxidation method
JPS5538068A (en) * 1978-09-12 1980-03-17 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS55105334A (en) * 1979-02-06 1980-08-12 Mitsubishi Electric Corp Method for surface treatment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178185A (https=) * 1974-12-28 1976-07-07 Mitsubishi Electric Corp
JPS51125698A (en) * 1975-04-03 1976-11-02 Mitsubishi Electric Corp The formation of silicon dioxide film
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
JPS53116781A (en) * 1977-03-22 1978-10-12 Nec Corp Selective anodic oxidation method
JPS5538068A (en) * 1978-09-12 1980-03-17 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS55105334A (en) * 1979-02-06 1980-08-12 Mitsubishi Electric Corp Method for surface treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016051737A (ja) * 2014-08-28 2016-04-11 国立大学法人九州大学 不純物導入方法及び半導体素子の製造方法

Also Published As

Publication number Publication date
JPH0247852B2 (https=) 1990-10-23

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