JPH0247852B2 - - Google Patents
Info
- Publication number
- JPH0247852B2 JPH0247852B2 JP55035020A JP3502080A JPH0247852B2 JP H0247852 B2 JPH0247852 B2 JP H0247852B2 JP 55035020 A JP55035020 A JP 55035020A JP 3502080 A JP3502080 A JP 3502080A JP H0247852 B2 JPH0247852 B2 JP H0247852B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- substrate
- pattern
- laser
- liquid nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3502080A JPS56130930A (en) | 1980-03-18 | 1980-03-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3502080A JPS56130930A (en) | 1980-03-18 | 1980-03-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130930A JPS56130930A (en) | 1981-10-14 |
| JPH0247852B2 true JPH0247852B2 (https=) | 1990-10-23 |
Family
ID=12430375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3502080A Granted JPS56130930A (en) | 1980-03-18 | 1980-03-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130930A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6372881B2 (ja) * | 2014-08-28 | 2018-08-15 | 国立大学法人九州大学 | 不純物導入方法及び半導体素子の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178185A (https=) * | 1974-12-28 | 1976-07-07 | Mitsubishi Electric Corp | |
| JPS51125698A (en) * | 1975-04-03 | 1976-11-02 | Mitsubishi Electric Corp | The formation of silicon dioxide film |
| JPS5275181A (en) * | 1975-12-13 | 1977-06-23 | Sony Corp | Formation of oxide film |
| JPS53116781A (en) * | 1977-03-22 | 1978-10-12 | Nec Corp | Selective anodic oxidation method |
| JPS5538068A (en) * | 1978-09-12 | 1980-03-17 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
| JPS55105334A (en) * | 1979-02-06 | 1980-08-12 | Mitsubishi Electric Corp | Method for surface treatment |
-
1980
- 1980-03-18 JP JP3502080A patent/JPS56130930A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130930A (en) | 1981-10-14 |
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