JPS56126978A - Manufacture of junction type field effect transistor - Google Patents

Manufacture of junction type field effect transistor

Info

Publication number
JPS56126978A
JPS56126978A JP3143180A JP3143180A JPS56126978A JP S56126978 A JPS56126978 A JP S56126978A JP 3143180 A JP3143180 A JP 3143180A JP 3143180 A JP3143180 A JP 3143180A JP S56126978 A JPS56126978 A JP S56126978A
Authority
JP
Japan
Prior art keywords
groove
substrate
layer
region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3143180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222462B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3143180A priority Critical patent/JPS56126978A/ja
Publication of JPS56126978A publication Critical patent/JPS56126978A/ja
Publication of JPS6222462B2 publication Critical patent/JPS6222462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3143180A 1980-03-11 1980-03-11 Manufacture of junction type field effect transistor Granted JPS56126978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3143180A JPS56126978A (en) 1980-03-11 1980-03-11 Manufacture of junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3143180A JPS56126978A (en) 1980-03-11 1980-03-11 Manufacture of junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS56126978A true JPS56126978A (en) 1981-10-05
JPS6222462B2 JPS6222462B2 (enrdf_load_stackoverflow) 1987-05-18

Family

ID=12331041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3143180A Granted JPS56126978A (en) 1980-03-11 1980-03-11 Manufacture of junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS56126978A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469388A (en) * 1977-11-14 1979-06-04 Matsushita Electric Ind Co Ltd Junction type field effect semiconductor device and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469388A (en) * 1977-11-14 1979-06-04 Matsushita Electric Ind Co Ltd Junction type field effect semiconductor device and its production

Also Published As

Publication number Publication date
JPS6222462B2 (enrdf_load_stackoverflow) 1987-05-18

Similar Documents

Publication Publication Date Title
JPS6421967A (en) Semiconductor device and manufacture thereof
JPS5691470A (en) Semiconductor
JPS6431456A (en) Semiconductor device
JPS56126978A (en) Manufacture of junction type field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS5521102A (en) Semiconductor memory cell
JPS56126973A (en) Mos field effect transistor
JPS56125875A (en) Semiconductor integrated circuit device
JPS6450465A (en) Semiconductor device
JPS57166067A (en) Bias generating unit for substrate
JPS54107270A (en) Semiconductor device and its production
JPS5736863A (en) Manufacture of semiconductor device
JPS55102274A (en) Insulated gate field effect transistor
JPS56133869A (en) Mos type semiconductor device and manufacture thereof
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5721865A (en) Manufacture of semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS57199268A (en) Junction type field effect transistor
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5492180A (en) Manufacture of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS6437059A (en) Manufacture of semiconductor device
JPS6481274A (en) Semiconductor device
JPS5732673A (en) Semiconductor device and manufacture thereof