JPS56125854A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS56125854A JPS56125854A JP2997280A JP2997280A JPS56125854A JP S56125854 A JPS56125854 A JP S56125854A JP 2997280 A JP2997280 A JP 2997280A JP 2997280 A JP2997280 A JP 2997280A JP S56125854 A JPS56125854 A JP S56125854A
- Authority
- JP
- Japan
- Prior art keywords
- misfet
- sequence
- pattern
- driving force
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2997280A JPS56125854A (en) | 1980-03-10 | 1980-03-10 | Integrated circuit |
GB8107353A GB2074372B (en) | 1980-03-10 | 1981-03-09 | Integrated circuit field effect transistors |
GB08329900A GB2135549B (en) | 1980-03-10 | 1983-11-09 | Semiconductor integrated circuits |
US06/661,837 US4635088A (en) | 1980-03-10 | 1984-10-17 | High speed-low power consuming IGFET integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2997280A JPS56125854A (en) | 1980-03-10 | 1980-03-10 | Integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1189217A Division JPH02290056A (ja) | 1989-07-21 | 1989-07-21 | 集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56125854A true JPS56125854A (en) | 1981-10-02 |
JPS6217876B2 JPS6217876B2 (US07413550-20080819-C00001.png) | 1987-04-20 |
Family
ID=12290870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2997280A Granted JPS56125854A (en) | 1980-03-10 | 1980-03-10 | Integrated circuit |
Country Status (3)
Country | Link |
---|---|
US (1) | US4635088A (US07413550-20080819-C00001.png) |
JP (1) | JPS56125854A (US07413550-20080819-C00001.png) |
GB (1) | GB2074372B (US07413550-20080819-C00001.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376468A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体集積回路 |
JPS63147838U (US07413550-20080819-C00001.png) * | 1987-03-19 | 1988-09-29 | ||
US6084436A (en) * | 1996-10-24 | 2000-07-04 | Nec Corporation | Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3376721D1 (de) * | 1982-07-30 | 1988-06-23 | Toshiba Kk | Mos logic circuit |
US4721986A (en) * | 1984-02-21 | 1988-01-26 | International Rectifier Corporation | Bidirectional output semiconductor field effect transistor and method for its maufacture |
JPH084129B2 (ja) * | 1986-11-19 | 1996-01-17 | キヤノン株式会社 | 光電変換装置 |
JPS63134685U (US07413550-20080819-C00001.png) * | 1987-02-24 | 1988-09-02 | ||
JPS6422270U (US07413550-20080819-C00001.png) * | 1987-08-03 | 1989-02-06 | ||
JPH0350690Y2 (US07413550-20080819-C00001.png) * | 1987-10-02 | 1991-10-29 | ||
JPH041812Y2 (US07413550-20080819-C00001.png) * | 1987-10-02 | 1992-01-22 | ||
JPH0356221Y2 (US07413550-20080819-C00001.png) * | 1987-10-02 | 1991-12-17 | ||
GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
US5272369A (en) * | 1990-03-28 | 1993-12-21 | Interuniversitair Micro-Elektronica Centrum Vzw | Circuit element with elimination of kink effect |
GB9201004D0 (en) * | 1992-01-17 | 1992-03-11 | Philips Electronic Associated | A semiconductor device comprising an insulated gate field effect device |
JP2758531B2 (ja) * | 1992-04-22 | 1998-05-28 | 三菱電機株式会社 | 半導体装置 |
JP2757848B2 (ja) * | 1996-01-23 | 1998-05-25 | 日本電気株式会社 | 電界効果型半導体装置 |
US6160280A (en) * | 1996-03-04 | 2000-12-12 | Motorola, Inc. | Field effect transistor |
US6090650A (en) * | 1997-09-30 | 2000-07-18 | Intel Corporation | Method to reduce timing skews in I/O circuits and clock drivers caused by fabrication process tolerances |
JP2001352047A (ja) * | 2000-06-05 | 2001-12-21 | Oki Micro Design Co Ltd | 半導体集積回路 |
EP1508919A1 (en) * | 2003-08-22 | 2005-02-23 | Dialog Semiconductor GmbH | Cascaded transistors in one well |
JP4024762B2 (ja) * | 2004-01-16 | 2007-12-19 | ユーディナデバイス株式会社 | 高周波スイッチ |
JP5372578B2 (ja) | 2009-04-09 | 2013-12-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2012054502A (ja) * | 2010-09-03 | 2012-03-15 | Elpida Memory Inc | 半導体装置 |
CN104967439B (zh) * | 2015-07-01 | 2018-02-06 | 东南大学 | 氮化镓基低漏电流固支梁开关场效应晶体管或非门 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181580A (US07413550-20080819-C00001.png) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | |
JPS5333072A (en) * | 1976-09-09 | 1978-03-28 | Nec Corp | Semiconductor device |
JPS5487159A (en) * | 1977-12-23 | 1979-07-11 | Fujitsu Ltd | Exclusive logical sum circuit |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
JPS5431671B2 (US07413550-20080819-C00001.png) * | 1973-03-14 | 1979-10-08 | ||
US3967988A (en) * | 1974-08-05 | 1976-07-06 | Motorola, Inc. | Diffusion guarded metal-oxide-silicon field effect transistors |
JPS5198938A (US07413550-20080819-C00001.png) * | 1975-02-26 | 1976-08-31 | ||
JPS5851427B2 (ja) * | 1975-09-04 | 1983-11-16 | 株式会社日立製作所 | 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法 |
JPS5258452A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Mis logic circuit |
US4084173A (en) * | 1976-07-23 | 1978-04-11 | Texas Instruments Incorporated | Interdigitated transistor pair |
US4142197A (en) * | 1977-04-14 | 1979-02-27 | Rca Corp. | Drain extensions for closed COS/MOS logic devices |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
US4389582A (en) * | 1979-02-09 | 1983-06-21 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Integrated logic circuit device with improved switching speed characteristics |
JPS6038028B2 (ja) * | 1979-07-23 | 1985-08-29 | 三菱電機株式会社 | 基板電位発生装置 |
-
1980
- 1980-03-10 JP JP2997280A patent/JPS56125854A/ja active Granted
-
1981
- 1981-03-09 GB GB8107353A patent/GB2074372B/en not_active Expired
-
1984
- 1984-10-17 US US06/661,837 patent/US4635088A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181580A (US07413550-20080819-C00001.png) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | |
JPS5333072A (en) * | 1976-09-09 | 1978-03-28 | Nec Corp | Semiconductor device |
JPS5487159A (en) * | 1977-12-23 | 1979-07-11 | Fujitsu Ltd | Exclusive logical sum circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376468A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体集積回路 |
JPH0638477B2 (ja) * | 1986-09-19 | 1994-05-18 | 富士通株式会社 | 半導体集積回路 |
JPS63147838U (US07413550-20080819-C00001.png) * | 1987-03-19 | 1988-09-29 | ||
US6084436A (en) * | 1996-10-24 | 2000-07-04 | Nec Corporation | Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance |
Also Published As
Publication number | Publication date |
---|---|
JPS6217876B2 (US07413550-20080819-C00001.png) | 1987-04-20 |
GB2074372B (en) | 1984-09-26 |
US4635088A (en) | 1987-01-06 |
GB2074372A (en) | 1981-10-28 |
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