JPS5333072A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5333072A JPS5333072A JP10807976A JP10807976A JPS5333072A JP S5333072 A JPS5333072 A JP S5333072A JP 10807976 A JP10807976 A JP 10807976A JP 10807976 A JP10807976 A JP 10807976A JP S5333072 A JPS5333072 A JP S5333072A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- igfets
- substances
- sizes
- loading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain MOS ratio circuits free from any variation in ground level output by making the substances and sizes for determining respective channel width and lengths identical and producing IGFETs in the same process in a semiconductor device wherein loading and driving IGFETs are formed within the same semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10807976A JPS5333072A (en) | 1976-09-09 | 1976-09-09 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10807976A JPS5333072A (en) | 1976-09-09 | 1976-09-09 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5333072A true JPS5333072A (en) | 1978-03-28 |
JPS6136388B2 JPS6136388B2 (en) | 1986-08-18 |
Family
ID=14475329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10807976A Granted JPS5333072A (en) | 1976-09-09 | 1976-09-09 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5333072A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5615074A (en) * | 1979-07-19 | 1981-02-13 | Pioneer Electronic Corp | Semiconductor device |
JPS56125854A (en) * | 1980-03-10 | 1981-10-02 | Nec Corp | Integrated circuit |
JPS6197861U (en) * | 1984-12-03 | 1986-06-23 |
-
1976
- 1976-09-09 JP JP10807976A patent/JPS5333072A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5615074A (en) * | 1979-07-19 | 1981-02-13 | Pioneer Electronic Corp | Semiconductor device |
JPS56125854A (en) * | 1980-03-10 | 1981-10-02 | Nec Corp | Integrated circuit |
JPS6217876B2 (en) * | 1980-03-10 | 1987-04-20 | Nippon Electric Co | |
JPS6197861U (en) * | 1984-12-03 | 1986-06-23 |
Also Published As
Publication number | Publication date |
---|---|
JPS6136388B2 (en) | 1986-08-18 |
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