GB2135549B - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB2135549B
GB2135549B GB08329900A GB8329900A GB2135549B GB 2135549 B GB2135549 B GB 2135549B GB 08329900 A GB08329900 A GB 08329900A GB 8329900 A GB8329900 A GB 8329900A GB 2135549 B GB2135549 B GB 2135549B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
semiconductor integrated
semiconductor
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08329900A
Other versions
GB2135549A (en
GB8329900D0 (en
Inventor
Hirotugu Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2997280A external-priority patent/JPS56125854A/en
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB8329900D0 publication Critical patent/GB8329900D0/en
Publication of GB2135549A publication Critical patent/GB2135549A/en
Application granted granted Critical
Publication of GB2135549B publication Critical patent/GB2135549B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB08329900A 1980-03-10 1983-11-09 Semiconductor integrated circuits Expired GB2135549B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2997280A JPS56125854A (en) 1980-03-10 1980-03-10 Integrated circuit
GB8107353A GB2074372B (en) 1980-03-10 1981-03-09 Integrated circuit field effect transistors

Publications (3)

Publication Number Publication Date
GB8329900D0 GB8329900D0 (en) 1983-12-14
GB2135549A GB2135549A (en) 1984-08-30
GB2135549B true GB2135549B (en) 1985-03-20

Family

ID=26278704

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08329900A Expired GB2135549B (en) 1980-03-10 1983-11-09 Semiconductor integrated circuits

Country Status (1)

Country Link
GB (1) GB2135549B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953743A (en) * 1975-02-27 1976-04-27 Rca Corporation Logic circuit
JPS5244551A (en) * 1975-10-06 1977-04-07 Toshiba Corp Logic circuit
US4395644A (en) * 1979-08-15 1983-07-26 Nippon Electric Co., Ltd. Drive circuit

Also Published As

Publication number Publication date
GB2135549A (en) 1984-08-30
GB8329900D0 (en) 1983-12-14

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20010308