JPS56110264A - High withstand voltage mos transistor - Google Patents

High withstand voltage mos transistor

Info

Publication number
JPS56110264A
JPS56110264A JP1147080A JP1147080A JPS56110264A JP S56110264 A JPS56110264 A JP S56110264A JP 1147080 A JP1147080 A JP 1147080A JP 1147080 A JP1147080 A JP 1147080A JP S56110264 A JPS56110264 A JP S56110264A
Authority
JP
Japan
Prior art keywords
type
region
insulating film
aluminum
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1147080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262069B2 (enrdf_load_stackoverflow
Inventor
Jun Ueda
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147080A priority Critical patent/JPS56110264A/ja
Publication of JPS56110264A publication Critical patent/JPS56110264A/ja
Publication of JPS6262069B2 publication Critical patent/JPS6262069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
JP1147080A 1980-02-04 1980-02-04 High withstand voltage mos transistor Granted JPS56110264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Publications (2)

Publication Number Publication Date
JPS56110264A true JPS56110264A (en) 1981-09-01
JPS6262069B2 JPS6262069B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=11778957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147080A Granted JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Country Status (1)

Country Link
JP (1) JPS56110264A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03201452A (ja) * 1989-12-28 1991-09-03 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
WO1995011525A1 (de) * 1993-10-22 1995-04-27 Robert Bosch Gmbh MONOLITHISCH INTEGRIERTES p-KANAL-HOCHSPANNUNGS-BAUELEMENT
US5430316A (en) * 1992-02-18 1995-07-04 Sgs-Thomson Microeletronics, S.R.L. VDMOS transistor with improved breakdown characteristics
JPH08130307A (ja) * 1994-10-31 1996-05-21 Nec Corp 半導体装置及びその製造方法
WO1999028974A1 (de) * 1997-12-02 1999-06-10 Siemens Aktiengesellschaft Pn-übergang mit erhöhter durchbruchspannung
EP1367648A3 (en) * 2002-05-24 2008-01-09 Texas Instruments Incorporated Semiconductor device with floating ring structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03201452A (ja) * 1989-12-28 1991-09-03 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5430316A (en) * 1992-02-18 1995-07-04 Sgs-Thomson Microeletronics, S.R.L. VDMOS transistor with improved breakdown characteristics
US5589405A (en) * 1992-02-18 1996-12-31 Sgs-Thomson Microelectronics, S.R.L. Method for fabricating VDMOS transistor with improved breakdown characteristics
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
WO1995011525A1 (de) * 1993-10-22 1995-04-27 Robert Bosch Gmbh MONOLITHISCH INTEGRIERTES p-KANAL-HOCHSPANNUNGS-BAUELEMENT
JPH08130307A (ja) * 1994-10-31 1996-05-21 Nec Corp 半導体装置及びその製造方法
WO1999028974A1 (de) * 1997-12-02 1999-06-10 Siemens Aktiengesellschaft Pn-übergang mit erhöhter durchbruchspannung
EP1367648A3 (en) * 2002-05-24 2008-01-09 Texas Instruments Incorporated Semiconductor device with floating ring structure

Also Published As

Publication number Publication date
JPS6262069B2 (enrdf_load_stackoverflow) 1987-12-24

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