JPS6262069B2 - - Google Patents

Info

Publication number
JPS6262069B2
JPS6262069B2 JP55011470A JP1147080A JPS6262069B2 JP S6262069 B2 JPS6262069 B2 JP S6262069B2 JP 55011470 A JP55011470 A JP 55011470A JP 1147080 A JP1147080 A JP 1147080A JP S6262069 B2 JPS6262069 B2 JP S6262069B2
Authority
JP
Japan
Prior art keywords
insulating film
region
gate insulating
conductivity type
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55011470A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56110264A (en
Inventor
Jun Ueda
Kuniki Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147080A priority Critical patent/JPS56110264A/ja
Publication of JPS56110264A publication Critical patent/JPS56110264A/ja
Publication of JPS6262069B2 publication Critical patent/JPS6262069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
JP1147080A 1980-02-04 1980-02-04 High withstand voltage mos transistor Granted JPS56110264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Publications (2)

Publication Number Publication Date
JPS56110264A JPS56110264A (en) 1981-09-01
JPS6262069B2 true JPS6262069B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=11778957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147080A Granted JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Country Status (1)

Country Link
JP (1) JPS56110264A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513874B2 (ja) * 1989-12-28 1996-07-03 三菱電機株式会社 半導体装置およびその製造方法
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
JPH0766398A (ja) * 1993-08-26 1995-03-10 Nec Corp 高耐圧半導体装置
DE4336054A1 (de) * 1993-10-22 1995-04-27 Bosch Gmbh Robert Monolithisch integriertes p-Kanal-Hochspannungs-Bauelement
JP2715941B2 (ja) * 1994-10-31 1998-02-18 日本電気株式会社 半導体装置の製造方法
DE19753468A1 (de) * 1997-12-02 1999-07-08 Siemens Ag PN-Übergang mit erhöhter Durchbruchspannung
US6670685B2 (en) * 2002-05-24 2003-12-30 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with floating ring structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor

Also Published As

Publication number Publication date
JPS56110264A (en) 1981-09-01

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