JPS56107245A - Manufacture of photomask - Google Patents
Manufacture of photomaskInfo
- Publication number
- JPS56107245A JPS56107245A JP1051980A JP1051980A JPS56107245A JP S56107245 A JPS56107245 A JP S56107245A JP 1051980 A JP1051980 A JP 1051980A JP 1051980 A JP1051980 A JP 1051980A JP S56107245 A JPS56107245 A JP S56107245A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- thin film
- pattern
- silicon
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1051980A JPS56107245A (en) | 1980-01-31 | 1980-01-31 | Manufacture of photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1051980A JPS56107245A (en) | 1980-01-31 | 1980-01-31 | Manufacture of photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56107245A true JPS56107245A (en) | 1981-08-26 |
JPS6140099B2 JPS6140099B2 (ja) | 1986-09-08 |
Family
ID=11752473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1051980A Granted JPS56107245A (en) | 1980-01-31 | 1980-01-31 | Manufacture of photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56107245A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4440841A (en) * | 1981-02-28 | 1984-04-03 | Dai Nippon Insatsu Kabushiki Kaisha | Photomask and photomask blank |
-
1980
- 1980-01-31 JP JP1051980A patent/JPS56107245A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4440841A (en) * | 1981-02-28 | 1984-04-03 | Dai Nippon Insatsu Kabushiki Kaisha | Photomask and photomask blank |
Also Published As
Publication number | Publication date |
---|---|
JPS6140099B2 (ja) | 1986-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0020776A4 (en) | METHOD OF FORMING PATTERNS. | |
JPS56107245A (en) | Manufacture of photomask | |
JPS5666038A (en) | Formation of micro-pattern | |
JPS56144536A (en) | Pattern formation and p-n junction formation | |
JPS56115534A (en) | Formation of pattern | |
JPS55158635A (en) | Mask | |
JPS56107241A (en) | Dry etching method | |
JPS5587148A (en) | Correction method for light shielding mask | |
JPS5632143A (en) | Manufacture of photomask | |
JPS56158334A (en) | Manufacture of hard mask | |
JPS5710930A (en) | Dry development method | |
JPS57112025A (en) | Formation of pattern | |
JPS5496371A (en) | Mask forming method | |
JPS55144246A (en) | Preparation of photomask | |
JPS5619053A (en) | Manufacture of photomask | |
JPS5799738A (en) | Charged beam exposure method | |
JPS56101745A (en) | Formation of microminiature electrode | |
JPS5635422A (en) | Method of etching | |
JPS57212447A (en) | Photomask | |
JPS5741638A (en) | Photomask for electron beam | |
JPS5656637A (en) | Forming method of fine pattern | |
JPS55108742A (en) | Forming method of minute pattern | |
JPS57202519A (en) | Production of transparent pattern electrode | |
JPS55144247A (en) | Preparation of photomask | |
JPS5655943A (en) | Pattern forming method |