JPS55144246A - Preparation of photomask - Google Patents

Preparation of photomask

Info

Publication number
JPS55144246A
JPS55144246A JP5391279A JP5391279A JPS55144246A JP S55144246 A JPS55144246 A JP S55144246A JP 5391279 A JP5391279 A JP 5391279A JP 5391279 A JP5391279 A JP 5391279A JP S55144246 A JPS55144246 A JP S55144246A
Authority
JP
Japan
Prior art keywords
resist
low reflection
chromium layer
layer
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5391279A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Akira Shigetomi
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5391279A priority Critical patent/JPS55144246A/en
Publication of JPS55144246A publication Critical patent/JPS55144246A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To prepare a hard type photomask by using, in combination, means of electron beam irradiation, ion injection, plasma etching, etc. on a polymer layer formed on a low reflection chromium layer provided on a glass substrate. CONSTITUTION:Resist 14 for electron beams is coated on a low reflection chromium layer consisting of chromium film 12 and chromium oxide film 13 formed on glass substrate 11, resist 14 is irradiated by electron beams 10 patternwise as it is kept at a constant high temperature, and resist 14 in the irradiated parts is evaporated to form exposed parts 15 of the chromium layer. Ions 20 of W, Mo, Sb, or the like are injected to the whole surface to form ion injected layer 16 on the low reflection chromium layer corresponding to parts 15, and after removing resist 14, the low reflection chromium layer is plasma-etched off to form a photomask.
JP5391279A 1979-04-27 1979-04-27 Preparation of photomask Pending JPS55144246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5391279A JPS55144246A (en) 1979-04-27 1979-04-27 Preparation of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5391279A JPS55144246A (en) 1979-04-27 1979-04-27 Preparation of photomask

Publications (1)

Publication Number Publication Date
JPS55144246A true JPS55144246A (en) 1980-11-11

Family

ID=12955918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5391279A Pending JPS55144246A (en) 1979-04-27 1979-04-27 Preparation of photomask

Country Status (1)

Country Link
JP (1) JPS55144246A (en)

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