JPS56100475A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56100475A
JPS56100475A JP330080A JP330080A JPS56100475A JP S56100475 A JPS56100475 A JP S56100475A JP 330080 A JP330080 A JP 330080A JP 330080 A JP330080 A JP 330080A JP S56100475 A JPS56100475 A JP S56100475A
Authority
JP
Japan
Prior art keywords
film
electrode
oxidized
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP330080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161544B2 (enrdf_load_stackoverflow
Inventor
Takashi Ito
Nobuo Toyokura
Shinichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP330080A priority Critical patent/JPS56100475A/ja
Publication of JPS56100475A publication Critical patent/JPS56100475A/ja
Publication of JPS6161544B2 publication Critical patent/JPS6161544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP330080A 1980-01-16 1980-01-16 Manufacture of semiconductor device Granted JPS56100475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP330080A JPS56100475A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP330080A JPS56100475A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56100475A true JPS56100475A (en) 1981-08-12
JPS6161544B2 JPS6161544B2 (enrdf_load_stackoverflow) 1986-12-26

Family

ID=11553513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP330080A Granted JPS56100475A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100475A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771806A (en) * 1980-10-17 1982-05-04 Nec Corp Forming method of nitrided film
JPS5935474A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS6240724A (ja) * 1985-08-17 1987-02-21 Fujitsu Ltd 半導体装置の製造方法
JPS6298723A (ja) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体デバイスの電極製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771806A (en) * 1980-10-17 1982-05-04 Nec Corp Forming method of nitrided film
JPS5935474A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS6240724A (ja) * 1985-08-17 1987-02-21 Fujitsu Ltd 半導体装置の製造方法
JPS6298723A (ja) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体デバイスの電極製造方法

Also Published As

Publication number Publication date
JPS6161544B2 (enrdf_load_stackoverflow) 1986-12-26

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