JPS5595363A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5595363A JPS5595363A JP325879A JP325879A JPS5595363A JP S5595363 A JPS5595363 A JP S5595363A JP 325879 A JP325879 A JP 325879A JP 325879 A JP325879 A JP 325879A JP S5595363 A JPS5595363 A JP S5595363A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- junction
- emitter layer
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP325879A JPS5595363A (en) | 1979-01-11 | 1979-01-11 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP325879A JPS5595363A (en) | 1979-01-11 | 1979-01-11 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595363A true JPS5595363A (en) | 1980-07-19 |
Family
ID=11552437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP325879A Pending JPS5595363A (en) | 1979-01-11 | 1979-01-11 | Thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595363A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60774A (ja) * | 1983-06-17 | 1985-01-05 | Nec Corp | サイリスタ |
JPS61214471A (ja) * | 1985-03-19 | 1986-09-24 | Res Dev Corp Of Japan | ゲ−ト制御半導体装置 |
DE3905434A1 (de) * | 1988-02-26 | 1989-08-31 | Mitsubishi Electric Corp | Bipolare halbleiterschalteinrichtung und verfahren zu ihrer herstellung |
WO2023067997A1 (ja) * | 2021-10-20 | 2023-04-27 | 新電元工業株式会社 | サイリスタ及びその製造方法 |
-
1979
- 1979-01-11 JP JP325879A patent/JPS5595363A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60774A (ja) * | 1983-06-17 | 1985-01-05 | Nec Corp | サイリスタ |
JPS61214471A (ja) * | 1985-03-19 | 1986-09-24 | Res Dev Corp Of Japan | ゲ−ト制御半導体装置 |
DE3905434A1 (de) * | 1988-02-26 | 1989-08-31 | Mitsubishi Electric Corp | Bipolare halbleiterschalteinrichtung und verfahren zu ihrer herstellung |
WO2023067997A1 (ja) * | 2021-10-20 | 2023-04-27 | 新電元工業株式会社 | サイリスタ及びその製造方法 |
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