JPS5481784A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5481784A
JPS5481784A JP14876677A JP14876677A JPS5481784A JP S5481784 A JPS5481784 A JP S5481784A JP 14876677 A JP14876677 A JP 14876677A JP 14876677 A JP14876677 A JP 14876677A JP S5481784 A JPS5481784 A JP S5481784A
Authority
JP
Japan
Prior art keywords
region
type
layer
cathode electrode
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14876677A
Other languages
Japanese (ja)
Other versions
JPS5940305B2 (en
Inventor
Hiroshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14876677A priority Critical patent/JPS5940305B2/en
Publication of JPS5481784A publication Critical patent/JPS5481784A/en
Publication of JPS5940305B2 publication Critical patent/JPS5940305B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To improve turn-off characteristics with the impedance of a surface lowered by providing a gate region surrounding an emitter region and projecting radially, and by forming a cathode electrode via a region of high impurity density in the emitter short structure.
CONSTITUTION: On P-type semiconductor substrate P1, N-type layer N1 and P-tupe layer P12 as a gate region are grown by being stacked, and at the center of the surface layer of layer P12, N-type auxiliary thyristor region N13 and N-type emitter region N12 surrounding it are diffusion-formed. On the surface layer part of layer P12, a plural number of P-type cathode regions P22 are diffusion-formed surrounding regions N12 and N13 and projecting radially and on it, P+-type region P22 for excellent contact with cathode electrode K is also diffusion-formed. Then, cathode electrode K extending from region P22' onto region N12, auxiliary cathode electrode Ks from region P22 onto region N13, gate electrode G on center region P22, and anode electrode A on the entire reverse surface of substrate P1 are fitted respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP14876677A 1977-12-13 1977-12-13 thyristor Expired JPS5940305B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14876677A JPS5940305B2 (en) 1977-12-13 1977-12-13 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14876677A JPS5940305B2 (en) 1977-12-13 1977-12-13 thyristor

Publications (2)

Publication Number Publication Date
JPS5481784A true JPS5481784A (en) 1979-06-29
JPS5940305B2 JPS5940305B2 (en) 1984-09-29

Family

ID=15460163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14876677A Expired JPS5940305B2 (en) 1977-12-13 1977-12-13 thyristor

Country Status (1)

Country Link
JP (1) JPS5940305B2 (en)

Also Published As

Publication number Publication date
JPS5940305B2 (en) 1984-09-29

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