JPS5591130A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5591130A JPS5591130A JP16577478A JP16577478A JPS5591130A JP S5591130 A JPS5591130 A JP S5591130A JP 16577478 A JP16577478 A JP 16577478A JP 16577478 A JP16577478 A JP 16577478A JP S5591130 A JPS5591130 A JP S5591130A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide film
- pattern
- etching
- border
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16577478A JPS5591130A (en) | 1978-12-27 | 1978-12-27 | Production of semiconductor device |
JP25406186A JPS6297376A (ja) | 1978-12-27 | 1986-10-24 | 半導体装置の電極パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16577478A JPS5591130A (en) | 1978-12-27 | 1978-12-27 | Production of semiconductor device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25406186A Division JPS6297376A (ja) | 1978-12-27 | 1986-10-24 | 半導体装置の電極パタ−ン形成方法 |
JP25406086A Division JPS6297332A (ja) | 1986-10-24 | 1986-10-24 | Mosトランジスタの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591130A true JPS5591130A (en) | 1980-07-10 |
Family
ID=15818774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16577478A Pending JPS5591130A (en) | 1978-12-27 | 1978-12-27 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591130A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131933U (ja) * | 1977-02-21 | 1977-10-06 | ||
JPS5789256A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of insulation gate type field effect transistor |
JPS5790940A (en) * | 1980-11-27 | 1982-06-05 | Toshiba Corp | Manufacture of semiconductor device |
JPS57114236A (en) * | 1981-01-07 | 1982-07-16 | Nec Corp | Formation of metal wiring |
JPS57117241A (en) * | 1981-01-13 | 1982-07-21 | Matsushita Electric Ind Co Ltd | Reactive ion etching method |
JPS60120523A (ja) * | 1983-12-05 | 1985-06-28 | Seiko Instr & Electronics Ltd | ドライエッチング方法 |
JPS6224627A (ja) * | 1985-07-25 | 1987-02-02 | Sony Corp | ドライエツチング方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324277A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor devic e and its production |
-
1978
- 1978-12-27 JP JP16577478A patent/JPS5591130A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324277A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor devic e and its production |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131933U (ja) * | 1977-02-21 | 1977-10-06 | ||
JPS5789256A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of insulation gate type field effect transistor |
JPS5790940A (en) * | 1980-11-27 | 1982-06-05 | Toshiba Corp | Manufacture of semiconductor device |
JPH028451B2 (ja) * | 1980-11-27 | 1990-02-23 | Tokyo Shibaura Electric Co | |
JPS57114236A (en) * | 1981-01-07 | 1982-07-16 | Nec Corp | Formation of metal wiring |
JPS57117241A (en) * | 1981-01-13 | 1982-07-21 | Matsushita Electric Ind Co Ltd | Reactive ion etching method |
JPS60120523A (ja) * | 1983-12-05 | 1985-06-28 | Seiko Instr & Electronics Ltd | ドライエッチング方法 |
JPS6224627A (ja) * | 1985-07-25 | 1987-02-02 | Sony Corp | ドライエツチング方法 |
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