JPS5789256A - Manufacture of insulation gate type field effect transistor - Google Patents

Manufacture of insulation gate type field effect transistor

Info

Publication number
JPS5789256A
JPS5789256A JP16608380A JP16608380A JPS5789256A JP S5789256 A JPS5789256 A JP S5789256A JP 16608380 A JP16608380 A JP 16608380A JP 16608380 A JP16608380 A JP 16608380A JP S5789256 A JPS5789256 A JP S5789256A
Authority
JP
Japan
Prior art keywords
insulation
regions
region
film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16608380A
Other languages
Japanese (ja)
Inventor
Tadayoshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16608380A priority Critical patent/JPS5789256A/en
Publication of JPS5789256A publication Critical patent/JPS5789256A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a MOS with a high break-down voltage and without dispersion by forming an offset gate region on the both sides of a gate electrode bringing in impurity using the gate electrode as a mask, then the region is covered with an insulation layer and a source and a drain regions are formed. CONSTITUTION:An insulation film 42 of 1mu thickness is formed on a silicon substrate 41 in a part where no element regions are to be formed and an insulation film of 400-1,000Angstrom thickess is formed on a part where element regions are to be formed. After a metal film 44 and an insulation film 45, which are to be a gate electrode, are laminated, the metal is removed except for the first metal film 442 and the second metal film 443. An offset gate regions 46, 47 are formed by injecting impurity using a remaining metal film as a mask and a thick insulation film 481, 482 cover these regions. The insulation films 481, 482 are a part of a mask in forming the source region 50 and the drain region 49.
JP16608380A 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor Pending JPS5789256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16608380A JPS5789256A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16608380A JPS5789256A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5789256A true JPS5789256A (en) 1982-06-03

Family

ID=15824661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16608380A Pending JPS5789256A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5789256A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272582A (en) * 1975-12-15 1977-06-17 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5448178A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Manufacture of mos semiconductor device
JPS5472987A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Manufacture of field effect transistor of insulation gate type
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272582A (en) * 1975-12-15 1977-06-17 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5448178A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Manufacture of mos semiconductor device
JPS5472987A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Manufacture of field effect transistor of insulation gate type
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

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