JPS5585674A - Detecting method for etching end point - Google Patents

Detecting method for etching end point

Info

Publication number
JPS5585674A
JPS5585674A JP16163278A JP16163278A JPS5585674A JP S5585674 A JPS5585674 A JP S5585674A JP 16163278 A JP16163278 A JP 16163278A JP 16163278 A JP16163278 A JP 16163278A JP S5585674 A JPS5585674 A JP S5585674A
Authority
JP
Japan
Prior art keywords
layer
impurity
etching
display
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16163278A
Other languages
English (en)
Inventor
Atsushi Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16163278A priority Critical patent/JPS5585674A/ja
Publication of JPS5585674A publication Critical patent/JPS5585674A/ja
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP16163278A 1978-12-23 1978-12-23 Detecting method for etching end point Pending JPS5585674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16163278A JPS5585674A (en) 1978-12-23 1978-12-23 Detecting method for etching end point

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16163278A JPS5585674A (en) 1978-12-23 1978-12-23 Detecting method for etching end point

Publications (1)

Publication Number Publication Date
JPS5585674A true JPS5585674A (en) 1980-06-27

Family

ID=15738869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16163278A Pending JPS5585674A (en) 1978-12-23 1978-12-23 Detecting method for etching end point

Country Status (1)

Country Link
JP (1) JPS5585674A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830131A (ja) * 1981-08-18 1983-02-22 Hoya Corp エッチングの終点検出法
JPS60251626A (ja) * 1984-05-28 1985-12-12 Mitsubishi Electric Corp エツチングの終点検出方法
JPS636845A (ja) * 1986-06-25 1988-01-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 反応性イオン・エツチング装置と方法
JPH0279427A (ja) * 1988-09-14 1990-03-20 Toshiba Corp 薄膜半導体素子の製造方法およびその装置
US6320246B1 (en) 1998-03-27 2001-11-20 Micron Technology, Inc. Semiconductor wafer assemblies
JP2012501545A (ja) * 2008-08-28 2012-01-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド ３次元マルチゲートｍｏｓｆｅｔの製造に有用であるバルクシリコンウェハー製品

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830131A (ja) * 1981-08-18 1983-02-22 Hoya Corp エッチングの終点検出法
JPH0322054B2 (ja) * 1981-08-18 1991-03-26 Hoya Corp
JPS60251626A (ja) * 1984-05-28 1985-12-12 Mitsubishi Electric Corp エツチングの終点検出方法
JPS636845A (ja) * 1986-06-25 1988-01-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 反応性イオン・エツチング装置と方法
JPH0279427A (ja) * 1988-09-14 1990-03-20 Toshiba Corp 薄膜半導体素子の製造方法およびその装置
US6320246B1 (en) 1998-03-27 2001-11-20 Micron Technology, Inc. Semiconductor wafer assemblies
US6344364B1 (en) 1998-03-27 2002-02-05 Micron Technology, Inc. Etching methods
US6379981B2 (en) * 1998-03-27 2002-04-30 Micron Technology, Inc. Methods incorporating detectable atoms into etching processes
JP2012501545A (ja) * 2008-08-28 2012-01-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド ３次元マルチゲートｍｏｓｆｅｔの製造に有用であるバルクシリコンウェハー製品
US9029854B2 (en) 2008-08-28 2015-05-12 Sunedison Semiconductor Limited (Uen201334164H) Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETs

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