JPS5585070A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5585070A
JPS5585070A JP15966878A JP15966878A JPS5585070A JP S5585070 A JPS5585070 A JP S5585070A JP 15966878 A JP15966878 A JP 15966878A JP 15966878 A JP15966878 A JP 15966878A JP S5585070 A JPS5585070 A JP S5585070A
Authority
JP
Japan
Prior art keywords
regions
type
source
drain
built
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15966878A
Other languages
Japanese (ja)
Other versions
JPS6315755B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15966878A priority Critical patent/JPS5585070A/en
Publication of JPS5585070A publication Critical patent/JPS5585070A/en
Publication of JPS6315755B2 publication Critical patent/JPS6315755B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To attain high integration, and to ensure the freedom of a design, by forming regions where impurities are introduced and electrodes and wiring in silicon in relationship that mutually becomes independent.
CONSTITUTION: Insulating layers 12 for field and a gate oxide film 14 are formed to a p-type semiconductor substrate 11. Phosphor silicate glass films 15 are made up on portions where source and drain each region must be built up. n+-Type source regions 161, 162, 163... and n+-type drain regions 171... are formed by thermally treating the whole body. All of the source regions 161... function as bit wires, and all of the drain regions 17... serve as power source lines. Gate electrodes 181, 182... functioning as word lines are made up, and p+-type channel-cut regions 13' are further built up by means of an ion injection method selectively.
COPYRIGHT: (C)1980,JPO&Japio
JP15966878A 1978-12-21 1978-12-21 Preparation of semiconductor device Granted JPS5585070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15966878A JPS5585070A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15966878A JPS5585070A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5585070A true JPS5585070A (en) 1980-06-26
JPS6315755B2 JPS6315755B2 (en) 1988-04-06

Family

ID=15698721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15966878A Granted JPS5585070A (en) 1978-12-21 1978-12-21 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585070A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49119588A (en) * 1973-03-15 1974-11-15
JPS5010086A (en) * 1973-05-23 1975-02-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49119588A (en) * 1973-03-15 1974-11-15
JPS5010086A (en) * 1973-05-23 1975-02-01

Also Published As

Publication number Publication date
JPS6315755B2 (en) 1988-04-06

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