JPS5580796A - Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method - Google Patents
Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling methodInfo
- Publication number
- JPS5580796A JPS5580796A JP15262478A JP15262478A JPS5580796A JP S5580796 A JPS5580796 A JP S5580796A JP 15262478 A JP15262478 A JP 15262478A JP 15262478 A JP15262478 A JP 15262478A JP S5580796 A JPS5580796 A JP S5580796A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- double
- gaas
- molten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To enhance the crystallinity of the title single crystal and reduce the cost by housing a lower portion of a pulling shaft, a crucible and an upper portion of a rotating shaft in a core tube and double-sealing a high dissociation press. cpd. melt in the crucible by a specified method.
CONSTITUTION: Quartz crucible 2, a lower portion of rotary pulling shaft 6 and an upper portion of rotating shaft 9 are housed in core tube 20 set on vertically movable driving stand 19 in metallic container 1 for growing a known single crystal such as GaAs provided with main- and after-heaters 7, 3, etc. The top of tube 20 is sealed with interlocked Mo cover 4 contg. molten B2O3 5, and the bottom with similar cover 21. The surface of molten GaAs in crucible 2 is coated with B2O3 melt 16. To receive molten B2O3 flowing from covers 4, 21, pans 17, 24 made of Mo or the like are attached. As a result, a conventional trouble due to deposition of GaAs or the like on the inside of the heated wall is prevented, resulting in no hindrance in crystallinity and enhanced productivity.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15262478A JPS5913480B2 (en) | 1978-12-12 | 1978-12-12 | A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15262478A JPS5913480B2 (en) | 1978-12-12 | 1978-12-12 | A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580796A true JPS5580796A (en) | 1980-06-18 |
JPS5913480B2 JPS5913480B2 (en) | 1984-03-29 |
Family
ID=15544440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15262478A Expired JPS5913480B2 (en) | 1978-12-12 | 1978-12-12 | A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5913480B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6419000A (en) * | 1987-07-14 | 1989-01-23 | Sumitomo Electric Industries | Production equipment for cdte crystal |
-
1978
- 1978-12-12 JP JP15262478A patent/JPS5913480B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6419000A (en) * | 1987-07-14 | 1989-01-23 | Sumitomo Electric Industries | Production equipment for cdte crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS5913480B2 (en) | 1984-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5580796A (en) | Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method | |
JPS54123585A (en) | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt | |
GB1430480A (en) | Methods of making single crystal intermetallic compounds semi conductors | |
GB1500540A (en) | Pots or cans containing paint | |
JPS57170891A (en) | Manufacture of single crystal | |
US5059401A (en) | Monocrystal growing apparatus | |
JPS5756397A (en) | Manufacture of single crystal | |
GB1388286A (en) | Monocrystalline materials | |
JPS5756399A (en) | Manufacture of single crystal of compound with high decomposition pressure | |
JPS5777098A (en) | Method and apparatus for growing znse in liquid phase | |
ATE118665T1 (en) | CONTAINER CLOSED BY HEAT SEALING WITH A FILM COVER FOR PRODUCTS TO HEAT UP OR COOKING IN AN OVEN, SUCH AS A MICROWAVE OVEN. | |
JPS57118086A (en) | Manufacture of single crystal | |
JPS6445799A (en) | Production of cadmium telluride based crystal | |
JPS5523070A (en) | Production of lithium tantalate single crystal | |
JPS5645890A (en) | Crystal growing apparatus | |
JPS5738397A (en) | Apparatus and method for growing crystal | |
JPS55113693A (en) | Semiconductor single crystal producing device | |
JPS57123889A (en) | Preparation of single crystal | |
JPS5562881A (en) | Production of multicomponent semiconductor crystal | |
JPS57181748A (en) | Production of metallic thin strip | |
JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
JPS57123887A (en) | Preparation of single crystal | |
JPS6325291A (en) | Production of single crystal | |
JPS55109293A (en) | Production of semiconductor crystal of group 3-5 compound |