JPS5580796A - Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method - Google Patents

Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method

Info

Publication number
JPS5580796A
JPS5580796A JP15262478A JP15262478A JPS5580796A JP S5580796 A JPS5580796 A JP S5580796A JP 15262478 A JP15262478 A JP 15262478A JP 15262478 A JP15262478 A JP 15262478A JP S5580796 A JPS5580796 A JP S5580796A
Authority
JP
Japan
Prior art keywords
single crystal
crucible
double
gaas
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15262478A
Other languages
Japanese (ja)
Other versions
JPS5913480B2 (en
Inventor
Fukuhiko Suga
Kenji Tomizawa
Mizuhiro Umehara
Kazutoshi Asakusa
Mikio Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP15262478A priority Critical patent/JPS5913480B2/en
Publication of JPS5580796A publication Critical patent/JPS5580796A/en
Publication of JPS5913480B2 publication Critical patent/JPS5913480B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To enhance the crystallinity of the title single crystal and reduce the cost by housing a lower portion of a pulling shaft, a crucible and an upper portion of a rotating shaft in a core tube and double-sealing a high dissociation press. cpd. melt in the crucible by a specified method.
CONSTITUTION: Quartz crucible 2, a lower portion of rotary pulling shaft 6 and an upper portion of rotating shaft 9 are housed in core tube 20 set on vertically movable driving stand 19 in metallic container 1 for growing a known single crystal such as GaAs provided with main- and after-heaters 7, 3, etc. The top of tube 20 is sealed with interlocked Mo cover 4 contg. molten B2O3 5, and the bottom with similar cover 21. The surface of molten GaAs in crucible 2 is coated with B2O3 melt 16. To receive molten B2O3 flowing from covers 4, 21, pans 17, 24 made of Mo or the like are attached. As a result, a conventional trouble due to deposition of GaAs or the like on the inside of the heated wall is prevented, resulting in no hindrance in crystallinity and enhanced productivity.
COPYRIGHT: (C)1980,JPO&Japio
JP15262478A 1978-12-12 1978-12-12 A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor Expired JPS5913480B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15262478A JPS5913480B2 (en) 1978-12-12 1978-12-12 A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15262478A JPS5913480B2 (en) 1978-12-12 1978-12-12 A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor

Publications (2)

Publication Number Publication Date
JPS5580796A true JPS5580796A (en) 1980-06-18
JPS5913480B2 JPS5913480B2 (en) 1984-03-29

Family

ID=15544440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15262478A Expired JPS5913480B2 (en) 1978-12-12 1978-12-12 A method for growing a single crystal of a high dissociation pressure compound for semiconductors using a double melt seal pulling method and an apparatus therefor

Country Status (1)

Country Link
JP (1) JPS5913480B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419000A (en) * 1987-07-14 1989-01-23 Sumitomo Electric Industries Production equipment for cdte crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419000A (en) * 1987-07-14 1989-01-23 Sumitomo Electric Industries Production equipment for cdte crystal

Also Published As

Publication number Publication date
JPS5913480B2 (en) 1984-03-29

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