JPS54123585A - Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt - Google Patents

Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt

Info

Publication number
JPS54123585A
JPS54123585A JP3112778A JP3112778A JPS54123585A JP S54123585 A JPS54123585 A JP S54123585A JP 3112778 A JP3112778 A JP 3112778A JP 3112778 A JP3112778 A JP 3112778A JP S54123585 A JPS54123585 A JP S54123585A
Authority
JP
Japan
Prior art keywords
melt
crucible
cpd
shaft
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3112778A
Other languages
Japanese (ja)
Other versions
JPS611397B2 (en
Inventor
Fukuhiko Suga
Kenji Tomizawa
Mizuhiro Umehara
Kazutoshi Asakusa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP3112778A priority Critical patent/JPS54123585A/en
Publication of JPS54123585A publication Critical patent/JPS54123585A/en
Publication of JPS611397B2 publication Critical patent/JPS611397B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow single crystal of a high-dissociation-pressure cpd. at an excellent crystallizability and mass productivity, by sealing with B2O3 melt the upper end of the crucible and the surface of the melt of high-dissociation-press.cpd. contained in the crucible, and by pulling up the melt of the cpd. in an atmosphere of evaporated vaporizable component of the cpd. through the B2O3 melt coating layer.
CONSTITUTION: The surface of melt 8 of GaAs, a high-dissociatuon-pressure cpd., is sealed with B2O3 melt 16, and another melt seal 5 is formed at the upper part of a rotatable crucible 2 made of silica, both the seals forming a double melt seal. A fitted lid 4, through which penetrate a rotatable pulling-up shaft 6, is supported at the upper part of the crucible 2, and a tray 17 made of Mo and Mo alloy, which receives and reserves the B2O3 melt flowing down along the shaft 6 while the metallic vessel 1 being evacuated, is installed at the lower part of the shaft 6. The lid 4 made of Mo and Mo alloy is fitted to the crucible 2. The gap formed between the periphery of the shaft 6 and the penetrating hole made at the bottom of the lid 4 is enlarged. A projection 18 is made at the periphery of the crucible 2, and a notch 19 fitting with the projection 18 is made on the inner surface of a graphite susceptor 10 in order to rotate the crucible 2 together with the susceptor 10.
COPYRIGHT: (C)1979,JPO&Japio
JP3112778A 1978-03-20 1978-03-20 Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt Granted JPS54123585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3112778A JPS54123585A (en) 1978-03-20 1978-03-20 Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3112778A JPS54123585A (en) 1978-03-20 1978-03-20 Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt

Publications (2)

Publication Number Publication Date
JPS54123585A true JPS54123585A (en) 1979-09-25
JPS611397B2 JPS611397B2 (en) 1986-01-16

Family

ID=12322752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3112778A Granted JPS54123585A (en) 1978-03-20 1978-03-20 Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt

Country Status (1)

Country Link
JP (1) JPS54123585A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170891A (en) * 1981-04-15 1982-10-21 Toshiba Corp Manufacture of single crystal
JPS5945995A (en) * 1982-09-03 1984-03-15 Sumitomo Electric Ind Ltd Method for pulling up single crystal of compound semiconductor and its device
US4483735A (en) * 1982-03-19 1984-11-20 Hitachi Cable, Ltd. Manufacturing process of semi-insulating gallium arsenide single crystal
JPS6081089A (en) * 1983-10-07 1985-05-09 Sumitomo Electric Ind Ltd Pulling method of single crystal
US4678534A (en) * 1984-06-08 1987-07-07 Sumitomo Electric Industries, Ltd. Method for growing a single crystal
US4734267A (en) * 1982-07-15 1988-03-29 Tokyo Shibaura Denki Kabushiki Kaisha Apparatus for growing compound semiconductor single crystals
US4873062A (en) * 1983-08-06 1989-10-10 Sumitomo Electric Industries, Ltd. Apparatus for the growth of single crystals
JPH0217564U (en) * 1988-07-14 1990-02-05

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170891A (en) * 1981-04-15 1982-10-21 Toshiba Corp Manufacture of single crystal
US4483735A (en) * 1982-03-19 1984-11-20 Hitachi Cable, Ltd. Manufacturing process of semi-insulating gallium arsenide single crystal
US4734267A (en) * 1982-07-15 1988-03-29 Tokyo Shibaura Denki Kabushiki Kaisha Apparatus for growing compound semiconductor single crystals
JPS5945995A (en) * 1982-09-03 1984-03-15 Sumitomo Electric Ind Ltd Method for pulling up single crystal of compound semiconductor and its device
US4873062A (en) * 1983-08-06 1989-10-10 Sumitomo Electric Industries, Ltd. Apparatus for the growth of single crystals
JPS6081089A (en) * 1983-10-07 1985-05-09 Sumitomo Electric Ind Ltd Pulling method of single crystal
JPH0352432B2 (en) * 1983-10-07 1991-08-09 Sumitomo Denki Kogyo Kk
US4678534A (en) * 1984-06-08 1987-07-07 Sumitomo Electric Industries, Ltd. Method for growing a single crystal
JPH0217564U (en) * 1988-07-14 1990-02-05

Also Published As

Publication number Publication date
JPS611397B2 (en) 1986-01-16

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