JPS54123585A - Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt - Google Patents
Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed meltInfo
- Publication number
- JPS54123585A JPS54123585A JP3112778A JP3112778A JPS54123585A JP S54123585 A JPS54123585 A JP S54123585A JP 3112778 A JP3112778 A JP 3112778A JP 3112778 A JP3112778 A JP 3112778A JP S54123585 A JPS54123585 A JP S54123585A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crucible
- cpd
- shaft
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow single crystal of a high-dissociation-pressure cpd. at an excellent crystallizability and mass productivity, by sealing with B2O3 melt the upper end of the crucible and the surface of the melt of high-dissociation-press.cpd. contained in the crucible, and by pulling up the melt of the cpd. in an atmosphere of evaporated vaporizable component of the cpd. through the B2O3 melt coating layer.
CONSTITUTION: The surface of melt 8 of GaAs, a high-dissociatuon-pressure cpd., is sealed with B2O3 melt 16, and another melt seal 5 is formed at the upper part of a rotatable crucible 2 made of silica, both the seals forming a double melt seal. A fitted lid 4, through which penetrate a rotatable pulling-up shaft 6, is supported at the upper part of the crucible 2, and a tray 17 made of Mo and Mo alloy, which receives and reserves the B2O3 melt flowing down along the shaft 6 while the metallic vessel 1 being evacuated, is installed at the lower part of the shaft 6. The lid 4 made of Mo and Mo alloy is fitted to the crucible 2. The gap formed between the periphery of the shaft 6 and the penetrating hole made at the bottom of the lid 4 is enlarged. A projection 18 is made at the periphery of the crucible 2, and a notch 19 fitting with the projection 18 is made on the inner surface of a graphite susceptor 10 in order to rotate the crucible 2 together with the susceptor 10.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3112778A JPS54123585A (en) | 1978-03-20 | 1978-03-20 | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3112778A JPS54123585A (en) | 1978-03-20 | 1978-03-20 | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54123585A true JPS54123585A (en) | 1979-09-25 |
JPS611397B2 JPS611397B2 (en) | 1986-01-16 |
Family
ID=12322752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3112778A Granted JPS54123585A (en) | 1978-03-20 | 1978-03-20 | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54123585A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57170891A (en) * | 1981-04-15 | 1982-10-21 | Toshiba Corp | Manufacture of single crystal |
JPS5945995A (en) * | 1982-09-03 | 1984-03-15 | Sumitomo Electric Ind Ltd | Method for pulling up single crystal of compound semiconductor and its device |
US4483735A (en) * | 1982-03-19 | 1984-11-20 | Hitachi Cable, Ltd. | Manufacturing process of semi-insulating gallium arsenide single crystal |
JPS6081089A (en) * | 1983-10-07 | 1985-05-09 | Sumitomo Electric Ind Ltd | Pulling method of single crystal |
US4678534A (en) * | 1984-06-08 | 1987-07-07 | Sumitomo Electric Industries, Ltd. | Method for growing a single crystal |
US4734267A (en) * | 1982-07-15 | 1988-03-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for growing compound semiconductor single crystals |
US4873062A (en) * | 1983-08-06 | 1989-10-10 | Sumitomo Electric Industries, Ltd. | Apparatus for the growth of single crystals |
JPH0217564U (en) * | 1988-07-14 | 1990-02-05 |
-
1978
- 1978-03-20 JP JP3112778A patent/JPS54123585A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57170891A (en) * | 1981-04-15 | 1982-10-21 | Toshiba Corp | Manufacture of single crystal |
US4483735A (en) * | 1982-03-19 | 1984-11-20 | Hitachi Cable, Ltd. | Manufacturing process of semi-insulating gallium arsenide single crystal |
US4734267A (en) * | 1982-07-15 | 1988-03-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for growing compound semiconductor single crystals |
JPS5945995A (en) * | 1982-09-03 | 1984-03-15 | Sumitomo Electric Ind Ltd | Method for pulling up single crystal of compound semiconductor and its device |
US4873062A (en) * | 1983-08-06 | 1989-10-10 | Sumitomo Electric Industries, Ltd. | Apparatus for the growth of single crystals |
JPS6081089A (en) * | 1983-10-07 | 1985-05-09 | Sumitomo Electric Ind Ltd | Pulling method of single crystal |
JPH0352432B2 (en) * | 1983-10-07 | 1991-08-09 | Sumitomo Denki Kogyo Kk | |
US4678534A (en) * | 1984-06-08 | 1987-07-07 | Sumitomo Electric Industries, Ltd. | Method for growing a single crystal |
JPH0217564U (en) * | 1988-07-14 | 1990-02-05 |
Also Published As
Publication number | Publication date |
---|---|
JPS611397B2 (en) | 1986-01-16 |
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