JPS59135635U - Mercury cell for molecular beam epitaxial growth - Google Patents
Mercury cell for molecular beam epitaxial growthInfo
- Publication number
- JPS59135635U JPS59135635U JP3000183U JP3000183U JPS59135635U JP S59135635 U JPS59135635 U JP S59135635U JP 3000183 U JP3000183 U JP 3000183U JP 3000183 U JP3000183 U JP 3000183U JP S59135635 U JPS59135635 U JP S59135635U
- Authority
- JP
- Japan
- Prior art keywords
- mercury
- molecular beam
- outer tube
- valve
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はＣｄＴｅ結晶基板の主面上にＨｇｘＣｄ□−ｘ
Ｔｅ結晶層を分子線エピタキシャル成長させる従来の分
子線エピタキシャル成長装置の一例の主要構成要素を模
式的に示す断面図、第２図はこの考案の一実施例の分子
線エピタキシャル成長用Ｈｇセルを装着した分子線エピ
タキシャル成長装置の主要構成要素を模式的に示す断面
図、第３図は上記実施例の分子線エピタキシャル成長用
Ｈｇセルをその近傍の取り付は部分とともに拡大して示
す断面図である。 ゛
図において、１は真空容器、３はＣｄＴｅ結晶基板、９
は開閉弁、１１は外管、１２はＨｇ封大人体１２ａは突
起部、１３はＨｇ封大人体封入されているＨｇ、１５は
重り、１６はＨｇ分子線誘導管である。なお、図中同一
符号はそれぞれ同一または相当部分を示す。Figure 1 shows HgxCd□-x on the main surface of a CdTe crystal substrate.
A cross-sectional view schematically showing the main components of an example of a conventional molecular beam epitaxial growth apparatus for growing a Te crystal layer by molecular beam epitaxial growth. FIG. FIG. 3 is a cross-sectional view schematically showing the main components of the epitaxial growth apparatus, and FIG. 3 is an enlarged cross-sectional view showing the Hg cell for molecular beam epitaxial growth of the above embodiment together with its vicinity.゛In the figure, 1 is a vacuum container, 3 is a CdTe crystal substrate, 9
11 is an open/close valve, 11 is an outer tube, 12 is an Hg seal body 12a is a protrusion, 13 is Hg enclosed in the Hg seal body, 15 is a weight, and 16 is an Hg molecular beam guiding tube. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
タキシャル成長する結晶基板が設置された真空容器の容
器壁に一方の端部が閉鎖され他方の開口端部が上記真空
容器内に開閉弁を介して連通ずるように気密に取り付け
られる水銀と合金を形成しない材料からなる外管と、こ
の外管内に挿入され石英管またはガラス管の一方の端部
を閉鎖し内部に水銀を注入して他方の端部をこの端部に
肉厚の薄い突起部ができるように真空封止した水銀封入
体と、石英またはガラスで被覆された磁性体からなり上
記水銀封入体の上方に設けられ上記水銀封入体への落下
によって上記突起部を破壊させる重りと、水銀と合金を
形成しない材料からなり一方の端部が上記開閉弁を介し
て上記外管と連通ずるように上記開閉弁に気密に取り付
けられ他方の端部が上記結晶基板の主面の近傍に伸びる
ように設けられ上記水銀封入体の上記突起部が上記重り
で破壊されたときにこの破壊部分から出る上記水銀封入
体に注入されている上記水銀の蒸発による水銀分子線を
上記外管および上記開閉弁を通して上記結晶基板の主面
上へ誘導する水銀分子線誘導管とを備えた分子線エピタ
キシャル成長用水銀セル。One end is closed on the container wall of a vacuum container in which a crystal substrate on which a crystalline layer of a mercury-containing compound is grown by molecular beam epitaxial growth on its main surface is installed, and the other open end is an on-off valve inside the vacuum container. An outer tube made of a material that does not form an alloy with mercury is installed airtight so as to communicate through the outer tube, and one end of the quartz tube or glass tube inserted into this outer tube is closed and mercury is injected inside. The other end is vacuum-sealed so that a thin protrusion is formed at this end, and the mercury enclosure is made of a magnetic material coated with quartz or glass, and is provided above the mercury enclosure. A weight that destroys the protrusion when dropped into the enclosure, and a material that does not form an alloy with mercury, and is airtightly attached to the on-off valve such that one end communicates with the outer tube via the on-off valve. and the other end thereof extends near the main surface of the crystal substrate, and when the protrusion of the mercury inclusion body is broken by the weight, the mercury inclusion body is injected into the mercury inclusion body that comes out from the broken part. A mercury cell for molecular beam epitaxial growth, comprising: a mercury molecular beam guide tube that guides a mercury molecular beam produced by evaporation of the mercury onto the main surface of the crystal substrate through the outer tube and the on-off valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3000183U JPS59135635U (en) | 1983-02-28 | 1983-02-28 | Mercury cell for molecular beam epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3000183U JPS59135635U (en) | 1983-02-28 | 1983-02-28 | Mercury cell for molecular beam epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59135635U true JPS59135635U (en) | 1984-09-10 |
Family
ID=30160874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3000183U Pending JPS59135635U (en) | 1983-02-28 | 1983-02-28 | Mercury cell for molecular beam epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59135635U (en) |
-
1983
- 1983-02-28 JP JP3000183U patent/JPS59135635U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1533216A (en) | Closure for an air evacuated container and method of assembly | |
| CA2077981A1 (en) | Blood collection tube assembly | |
| CA2136581A1 (en) | Gallium Oxide Thin Films | |
| JPS59135635U (en) | Mercury cell for molecular beam epitaxial growth | |
| AU543312B2 (en) | Information recording material | |
| JPS5571006A (en) | Magnetic thin film and its manufacturing method | |
| JPS60251191A (en) | Process for growing single crystal of compound having high dissociation pressure | |
| JPS54123585A (en) | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt | |
| JPS5683851A (en) | Optical recording material | |
| JPS5755535A (en) | Production of magnetic recording medium | |
| JPS56155528A (en) | Method of diffusing impurity into semiconductor substrate | |
| JPS54141587A (en) | Production of semiconductor absolute pressure transducer | |
| JPS57138059A (en) | Manufacture for magnetic recording medium | |
| JPS5622221A (en) | Protective film growing method for magnetic disk | |
| JPS6080137A (en) | Production device of vertical magnetic recording medium | |
| JPS5726913A (en) | Ultrasmall size quartz oscillator | |
| JPS57155725A (en) | Thin film growth | |
| JPS5933660U (en) | Goniometer sample position control device | |
| JPS6029356U (en) | display tube envelope | |
| JPS5380158A (en) | Vapor phase growth for compound semiconductor | |
| JPS5755536A (en) | Production of magnetic recording medium | |
| JPS5710244A (en) | Device for liquid phase epitaxial growth | |
| JPS57114239A (en) | Manufacture of semiconductor device | |
| JPS5755534A (en) | Production of magnetic recording medium | |
| JPS60132458U (en) | Vapor phase growth equipment |