JPH01160895A - Slide boat for liquid-phase epitaxial growth - Google Patents
Slide boat for liquid-phase epitaxial growthInfo
- Publication number
- JPH01160895A JPH01160895A JP31957987A JP31957987A JPH01160895A JP H01160895 A JPH01160895 A JP H01160895A JP 31957987 A JP31957987 A JP 31957987A JP 31957987 A JP31957987 A JP 31957987A JP H01160895 A JPH01160895 A JP H01160895A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- well
- boat
- epitaxial growth
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000012010 growth Effects 0.000 title claims description 12
- 239000007791 liquid phase Substances 0.000 title claims description 8
- 239000000155 melt Substances 0.000 claims abstract description 15
- 238000005192 partition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052753 mercury Inorganic materials 0.000 abstract description 5
- 229910052714 tellurium Inorganic materials 0.000 abstract description 4
- 229910004262 HgTe Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010494 dissociation reaction Methods 0.000 abstract description 2
- 230000005593 dissociations Effects 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000289 melt material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明に半導体の液相エピタキシャル成長用スライド
ボートに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a slide boat for liquid phase epitaxial growth of semiconductors.
液相エピタキシャル成長法に従来、ガリウム砒素（Ｇａ
Ａ ｓ ） ＋ガリウムアルミニウム砒素（ＧａＡＬＡ
ｓ）など■−ｖ属化合物半導体、カドミウムテルル（Ｃ
ｄＴｅ）、ジンクセレン（ＺｎＳｅ）、カドミウム水銀
テルル（ＣｄＨｇＴｅ ）などロー■属化合物半導体の
薄膜炸裂に用いられる成長法の一つで、主にスライドボ
ートを使用して成膜される。Conventionally, gallium arsenide (Ga
A s ) + gallium aluminum arsenide (GaALA
■-v group compound semiconductors such as s), cadmium telluride (C
This is one of the growth methods used to explode thin films of low group compound semiconductors such as dTe), zinc selenium (ZnSe), and cadmium mercury tellurium (CdHgTe), and is mainly formed using a slide boat.
第２図に従来−船釣に用いられてきたスライドボートの
使用状態を示す図であり、図において、（！１は下部ボ
ートで基板（３）が入るウェル１２）を有する。FIG. 2 is a diagram showing the state of use of a slide boat conventionally used for boat fishing. In the figure, (!1 is a lower boat, which has a well 12 into which a substrate (3) is placed).
（４）ケ上部ボートで下部ポー） ｔｌ＋の上をスライ
ドする構造になっている。上部ボート（４）にａウェル
（５）があり、その中にはエピタキシャル成長に必要な
元素を含むメルト材（７）が入っている。メルト中に易
蒸発性元素がある場合にウェル（５）の上部に蓋（６）
を設ける。(4) Upper boat and lower boat) It has a structure that slides on the tl+. There is an a-well (5) in the upper boat (4), which contains a melt material (7) containing the elements necessary for epitaxial growth. If there are easily evaporable elements in the melt, place a lid (6) on top of the well (5).
will be established.
ＣｄＴｅ ４板上にＣｄＨｇＴｅ０液相エピタキシヤル
説長を行う場合、基板をウェル（２１に入れ、ウェル（
５）にげＣｄ、Ｈｇ及びＴｅを、Ｔｅ過剰の状態で入れ
る。When performing CdHgTe0 liquid phase epitaxial growth on a CdTe 4 plate, the substrate is placed in the well (21) and the well (
5) Add Cd, Hg and Te in a Te-excess state.
この状態で水素気流巾約５００°Ｃに加熱するとウェル
（５）の甲の金属は溶融する。In this state, when heated to a hydrogen flow width of approximately 500°C, the metal of the instep of the well (5) will melt.
このような溶融金！４は一般にメルト材と称されている
。Such melting gold! 4 is generally called a melt material.
この状態が第２図（、）である。次に一定速度で温度を
下げ、ある温度で上部ボート４）を第２図（ｂ）の位置
へスライドさせると、基板上にＣｄＨｇＴｅがエピタキ
シャル成長する。その後、第２図（ｃ）の位置へ上部ボ
ート（４）をスライドさせると、メルト（７）が基板（
３）から分離され、ＣｄＴｅ上にＣｄＨｇＴｅがエピタ
キシャル成長したＣｄＨｇＴｅウェハが得られる。This state is shown in FIG. 2 (,). Next, the temperature is lowered at a constant rate, and when the upper boat 4) is slid to the position shown in FIG. 2(b) at a certain temperature, CdHgTe grows epitaxially on the substrate. After that, when the upper boat (4) is slid to the position shown in Fig. 2(c), the melt (7) is transferred to the substrate (
3) to obtain a CdHgTe wafer in which CdHgTe is epitaxially grown on CdTe.
液相エピタキシャル成長ａ１従来、上述したようなボー
トを使用していたが、メルト中に易蒸発性元素を含む場
合に、蓋（６１があっても、蓋（６）と上部ボートの間
隙から、易蒸発性元素がエピタキシャル成長中も蒸発し
て行くため、エピタキシャル層げ層厚方向に組成分布が
生じ、均一なエピタキシャルウェハが得られないという
問題点があった。Liquid phase epitaxial growth a1 Conventionally, a boat as described above has been used, but when the melt contains easily evaporable elements, even if there is a lid (61), it is easy to Since the evaporable elements continue to evaporate during epitaxial growth, there is a problem that a compositional distribution occurs in the thickness direction of the epitaxial layer, making it impossible to obtain a uniform epitaxial wafer.
この発明ぼ上記問題点を解消するためＶＣなされたもの
で、エピタキシャル成長において易蒸発性元素を均一に
作用させることができる液相エピタキシャル成長相スラ
イドボート乞得ることを目的とするものである。This invention has been developed by VC in order to solve the above-mentioned problems, and it is an object of the present invention to provide a liquid phase epitaxial growth phase slide boat in which an easily evaporable element can be applied uniformly during epitaxial growth.
この発明に係る液相エピタキシャル成長相スライドボー
トハ、上部ボート（４）の内部に気密蓋を有する多孔質
隔壁を設けてメルト用ウェルを上下に仕切ったものであ
る。In the liquid phase epitaxial growth phase slide boat according to the present invention, a porous partition wall having an airtight lid is provided inside the upper boat (4) to partition the melt well into upper and lower parts.
この発明における気密蓋を有する多孔質隔壁にガスを容
易に通す材料であるので、メルト用ウェルの中の易蒸発
性元素の分圧を上げることができる。Since the material allows gas to easily pass through the porous partition wall having an airtight lid in this invention, it is possible to increase the partial pressure of the easily evaporable element in the melt well.
以下、この発明を図を用いて説明する。 Hereinafter, this invention will be explained using figures.
第１図にこの発明によるスライドボートの主要な部分を
示す断面図である。Ａｆｊ１図は第２図（ｂ）に対応し
たもので、エピタキシャル成長時の状態である。図にお
いて、（１）〜（４＋ 、 ＋６１ 、 ＋７＋は！ｇ
２図と同じものである。（５１） 、 （５１１）は第
２図の（５）に対応したメルト用ウェルで多孔質隔壁（
８）及び気密な内蓋（９）で分離されている。（ｌＯ）
は易蒸発性元素を解離しメルト用ウェル（５１）の中の
易蒸発性元素の分圧を上げるための易蒸発性元素ソース
材、（ＩＩ）ｄ上部ポー１（４）と内蓋（９）との隙間
を閉じるためのシール材料である。FIG. 1 is a sectional view showing the main parts of a slide boat according to the present invention. Figure Afj1 corresponds to Figure 2(b) and shows the state during epitaxial growth. In the figure, (1) to (4+, +61, +7+ are !g
It is the same as Figure 2. (51) and (511) are melt wells corresponding to (5) in Figure 2 and have porous partition walls (
8) and an airtight inner lid (9). (lO)
(II) d upper port 1 (4) and inner lid (9); ) is a sealing material to close the gap between the
以下、ＣｄＨｇＴｅのエピタキシャル成長を例にとり、
この発明の内容を詳述する。Taking the epitaxial growth of CdHgTe as an example,
The content of this invention will be explained in detail.
なお、下部ボート（１）、上部ボート（４）、蓋（６）
及び内蓋（９）は高密度でガスを通さない材料、多孔質
隔壁（８）ホガスを容易に通す材料でできている。In addition, the lower boat (1), the upper boat (4), and the lid (6)
The inner lid (9) is made of a dense and gas-impermeable material, and the porous partition wall (8) is made of a material that allows the gas to pass through easily.
まず、多孔質隔壁（８）の凹部にＨｇＴｅ＋内蓋（９）
の上部に金・属カドミウムを入れ、水銀気流中５００°
Ｃに加熱する。加熱中にカドミウムニ溶融しメルト用ウ
ェル（５１）と（５１１）との隙間は、この溶融カドミ
ウムにより閉じられ、メルト用ウェル（５１）と（５１
１）にガスの連通がない独立の部屋となる。従って、Ｈ
ｇＴｅから解離して発生する水銀の蒸気に多孔質隔壁（
８）を通りウェル（５１）に入り、メルト（７）の上部
に水銀の蒸気圧が加わる。この蒸気圧によりメルトから
の水銀の解離がほとんど無くなるためにメルトの組成の
経時変化が減少する。First, the HgTe + inner lid (9) was placed in the recess of the porous partition wall (8).
Metal/metal cadmium is placed in the upper part of the mercury and heated at 500°
Heat to C. During heating, the cadmium melts and the gap between the melting wells (51) and (511) is closed by this melting cadmium.
1) is an independent room with no gas connection. Therefore, H
Porous partition wall (
8) and enters the well (51), where the vapor pressure of mercury is applied to the upper part of the melt (7). This vapor pressure almost eliminates the dissociation of mercury from the melt, thereby reducing changes in the composition of the melt over time.
なお、上記実施例ではシール材料にカドミウムを甲いた
が、テルルを用いても同様の効果が有る。Although cadmium is used as the sealing material in the above embodiment, the same effect can be obtained by using tellurium.
また、実施例で１４ ＣｄＨｇＴｅについて述べたが、
ＺｎＨｇＴｅなど、易蒸発性元素を含む他の化合物半導
体の液相成長にもこの発明が有効であるのは言うまでも
ない。In addition, although 14 CdHgTe was described in the example,
It goes without saying that the present invention is also effective for liquid phase growth of other compound semiconductors containing easily vaporizable elements such as ZnHgTe.
以上のように、この発明によれば、メルト用ウェルを上
下（５１）、 （５１１）に多孔質隔壁で仕切り、この
多孔質隔壁の上部に気密な内蓋を設けた構成にしたので
、層厚方向の組成分布がほとんどない良質のエピタキシ
ャル結晶が得られる効果がある。As described above, according to the present invention, the melt well is partitioned into upper and lower parts (51) and (511) by porous partition walls, and an airtight inner cover is provided above the porous partition walls. This has the effect of obtaining a high quality epitaxial crystal with almost no composition distribution in the thickness direction.
９；１図はこの発明によるスライドボートの主要な部分
を示す断面図、第２図に従来−船釣に用いられてきたス
ライドボートの使用状態を示す図である。図において、
（１）に下部ポー）、ｆ２１Ｈ基板用ウェル、（３）は
基板、（４）に上部ボート、＋５１ 、 （５１）。
（５１１） ｆｌメルト用ウェル、（６１ｆｌ蓋、（７
）Ｈメルト材、（８）は多孔質隔壁、（９）に内蓋、（
１０）は易蒸発性元素ソ−ス材、（１１）はシール材。
なお、図中、同一符号に同−又は相当部分を示す。9:1 is a sectional view showing the main parts of the slide boat according to the present invention, and FIG. 2 is a view showing the state of use of the slide boat conventionally used for boat fishing. In the figure,
(1) is the bottom port), f21H substrate well, (3) is the substrate, (4) is the top boat, +51, (51). (511) fl melt well, (61 fl lid, (7
) H melt material, (8) porous partition wall, (9) inner lid, (
10) is an easily evaporable element source material, and (11) is a sealing material. In addition, in the drawings, the same reference numerals indicate the same or equivalent parts.
Claims (1)
膜を成長させるためのメルト用ウェルを有し、下部ボー
トに対しスライドすることが可能な上部ボート、および
メルト用ウェルを密密閉する蓋で構成されたスライドボ
ートにおいて、メルト用ウェルが多孔質隔壁で上下に仕
切られており、更に上記多孔質隔壁の上部に気密な内蓋
が置かれる構造になつていることを特徴とする液相エピ
タキシャル成長用スライドボート。It consists of a lower boat that holds the substrate, an upper boat that has a melt well for growing an epitaxial film on the substrate and can slide relative to the lower boat, and a lid that tightly seals the melt well. A slide boat for liquid phase epitaxial growth, characterized in that the melt well is divided into upper and lower parts by a porous partition wall, and an airtight inner lid is placed on top of the porous partition wall. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31957987A JPH01160895A (en) | 1987-12-16 | 1987-12-16 | Slide boat for liquid-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31957987A JPH01160895A (en) | 1987-12-16 | 1987-12-16 | Slide boat for liquid-phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160895A true JPH01160895A (en) | 1989-06-23 |
Family
ID=18111841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31957987A Pending JPH01160895A (en) | 1987-12-16 | 1987-12-16 | Slide boat for liquid-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160895A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100416697B1 (en) * | 2001-06-04 | 2004-02-05 | 주식회사 옵토웨이퍼테크 | Vertical Liquid Phase Epitaxy Equipment |
-
1987
- 1987-12-16 JP JP31957987A patent/JPH01160895A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100416697B1 (en) * | 2001-06-04 | 2004-02-05 | 주식회사 옵토웨이퍼테크 | Vertical Liquid Phase Epitaxy Equipment |
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