JPH01208393A - Slider boat for liquid-phase epitaxial growth - Google Patents
Slider boat for liquid-phase epitaxial growthInfo
- Publication number
- JPH01208393A JPH01208393A JP3118588A JP3118588A JPH01208393A JP H01208393 A JPH01208393 A JP H01208393A JP 3118588 A JP3118588 A JP 3118588A JP 3118588 A JP3118588 A JP 3118588A JP H01208393 A JPH01208393 A JP H01208393A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- melt
- chambers
- well
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title claims abstract description 12
- 239000000155 melt Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 13
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000003708 ampul Substances 0.000 description 9
- 239000000289 melt material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体の液相エピタキシャル成長用スライダー
ボートに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a slider boat for liquid phase epitaxial growth of semiconductors.
液相エピタキシャル成長法は従来ガリウム砒素（ＧａＡ
ｓ） 、ガリウムアルミニウム砒素（ＧａＡｌＡｓ
）などのＩ−Ｙ属化合物半導体及びカドミウムテルル（
ＣｄＴｅ） 、ジンクセレン（ＺｎＳｅ） 、水銀
カドミウムテルル（ＨｇＣｄＴｅ）などの１−ＩＶ属化
合物半導体の薄膜作製に用いられる成長法の一つで、主
にスライダーボートを使用して成膜される。The liquid phase epitaxial growth method has traditionally used gallium arsenide (GaA).
s), gallium aluminum arsenide (GaAlAs
) and other I-Y compound semiconductors such as cadmium tellurium (
It is one of the growth methods used to produce thin films of 1-IV group compound semiconductors such as CdTe), zinc selenium (ZnSe), and mercury cadmium tellurium (HgCdTe), and is mainly formed using a slider boat.
第２図（ａ）〜（Ｃ）は従来の一般的なスライダーボー
トを用いた液相エピタキシャル成長法を成長工程順に示
す断面図で、スライダーボートは例えば高純度グラフ１
イトで作られていることが多い。図において、（１）は
下部ボートで、基＠（３）が入るウェル（２）を有する
。（４）は上部ボートで、下部ボート（ｌ）の上をスラ
イドする構造になっている。上部ボート（４） Ｉヒは
ウェル（Ｊ）） ｂ４あり、その中にはエピタキシャル
成長に必要な元素を含むメルト材（７）が入っている。Figures 2 (a) to (C) are cross-sectional views showing the conventional liquid phase epitaxial growth method using a general slider boat in the order of the growth steps.
It is often made of light. In the figure, (1) is the lower boat, which has a well (2) into which the base (3) is placed. (4) is the upper boat, which is structured to slide on the lower boat (l). There is a well (J) b4 in the upper boat (4), which contains a melt material (7) containing elements necessary for epitaxial growth.
メルト材（７）中に易蒸発性元素がある場合はウェル゛
（５）の上部に蓋（６）を設ける。If the melt material (7) contains easily evaporable elements, a lid (6) is provided above the well (5).
例えばＣｄＴｅ基板上書こＨｇ Ｋ−ｘＣｄｘＴｅのエ
ピタキシャル成長を行なう場合は基板（３）をウェル（
２）に入れ、ウェル（５）には所望のエピタキシャル膜
の組成番と応じたＨｇ 、 Ｃｄおよび過剰量のＴｅか
らなるメルト材、即ちメルト組成物（Ｈｇｚ −ｚＣｄ
ｚ） ｔ −ｙＴｅｙ（ｙ＝ｏ、ｇ）を入れる。この状
態が第２回船である。For example, when performing epitaxial growth of Hg K-xCdxTe over a CdTe substrate, the substrate (3) is
2), and the well (5) contains a melt material consisting of Hg, Cd and an excess amount of Te, that is, a melt composition (Hgz -zCd) corresponding to the composition number of the desired epitaxial film.
z) Enter t −yTey (y=o, g). This condition is the second ship.
水素気流巾約５００°Ｃ程度に温度を上げるとメルト材
（７）は溶解する。The melt material (7) melts when the temperature is raised to a hydrogen flow width of about 500°C.
次１と、全体の温度中を一定の速度で下げて行き、メル
ト組成により決まるメルトの固液平衡温度（Ｔｍ）にな
ったとき、上部ボート（４）をスライドしてメルト（７
）をエピタキシャル成長用基板（３）上に配置し、第２
図（ｂ）の状態にする。Ｔ＜Ｔｍではメルト（７）は過
飽和の状態になるため全体の温度中を下げると、ＣｄＴ
ｅ基板（３）上にメルト組成物に対応した組成のＨｇ
１−ｘＣｄｘＴｅのエピタキシャル膜が成長する。次に
、第２図（ｅ）の位置へ上部ボート（４）をスライドさ
せるとメルト（７）が基板（３）から分離され、表面に
Ｈｇ ｔ−ｘＣｄｘＴｅのエピタキシャル膜を有するＣ
ｄＴｅ基板（３）が得られろ。Next, the overall temperature is lowered at a constant rate, and when the solid-liquid equilibrium temperature (Tm) of the melt determined by the melt composition is reached, the upper boat (4) is slid and the melt (7) is lowered.
) is placed on the epitaxial growth substrate (3), and the second
Set the state as shown in figure (b). When T<Tm, the melt (7) becomes supersaturated, so if the overall temperature is lowered, CdT
Hg of a composition corresponding to the melt composition is placed on the e-substrate (3).
An epitaxial film of 1-xCdxTe is grown. Next, by sliding the upper boat (4) to the position shown in FIG. 2(e), the melt (7) is separated from the substrate (3), and the C.
A dTe substrate (3) is obtained.
メルト材（７）は通常、第８図のようなアンプル中で前
もって溶融混合しておく。Ｈｇ１−ｘＣｄｘＴｅのエピ
タキシャル成長では（Ｈｇ ｔ −ｚＣｄｚ） ｌ−ｙ
’ｒｙの組成になるようにＨｇ 、 Ｃｄ 、 Ｔｅを
秤量し石英アンプル（８）中に真空封止し６００℃程度
に加熱することにより溶融混合する。その後アンプルを
大気中に出し急冷する。この際メルト（７）が接触して
いる石英アンプル壁は、メルト（７）と接触していない
上部の石英アンプル壁より冷却が遅れるためメルト中の
蒸気圧が高いＨｇは冷却中に主にメルトの表面から飛散
しアンプル上部の温度の低い壁に凝縮する。The melt material (7) is usually melted and mixed in advance in an ampoule as shown in FIG. In the epitaxial growth of Hg1-xCdxTe, (Hg t -zCdz) ly
Hg, Cd, and Te are weighed so as to have a composition of 'ry', vacuum-sealed in a quartz ampoule (8), and heated to about 600° C. to melt and mix. The ampoule is then put out into the atmosphere and rapidly cooled. At this time, the quartz ampoule wall that is in contact with the melt (7) cools more slowly than the upper quartz ampoule wall that is not in contact with the melt (7), so the Hg with high vapor pressure in the melt mainly melts during cooling. It scatters from the surface of the ampoule and condenses on the cooler wall at the top of the ampoule.
即ち冷却固化したメルトは表面近傍程Ｈｇ含量が低くな
っている。That is, the melt that has been cooled and solidified has a lower Hg content near the surface.
このように組成分布を持つメルトを第２図のウェル（５
）にセットしてスライダーボートを加熱していくと、４
００℃程度でメルトが溶融したときメルト（７）（第２
図）の下部スライダーボートと接触している面内の組成
が不均一になり、結果としてＨｇ １−ｚｃｄｘＴｅの
Ｘの値が面内でばらついてしまう課題を有する。The melt with this compositional distribution is placed in the well (5) shown in Figure 2.
) and heat the slider boat, 4
When the melt melts at about 00℃, melt (7) (second
The problem is that the composition within the plane that is in contact with the lower slider boat in Figure) becomes non-uniform, and as a result, the value of X of Hg 1-zcdxTe varies within the plane.
本発明はこのような課題を解消するためになされたもの
で、面内組成分布が均一なエピタキシャル層を得ること
を目的としている。The present invention has been made to solve these problems, and its purpose is to obtain an epitaxial layer with a uniform in-plane composition distribution.
本発明に係る液相エピタキシャル成長用スライダーボー
トは上部ボートのメルト用ウェルを上下方向に少なくと
も２室に分離し、各部屋を連通させたものである。In the slider boat for liquid phase epitaxial growth according to the present invention, the melt well of the upper boat is separated into at least two chambers in the vertical direction, and each chamber is communicated with each other.
本発明の液相エピタキシャル成長用スライダーボートは
上部ボートのメルト用のウェルを２部屋に分けて細孔で
両部屋を連通させることによって、面内組成分布を均一
にして良好な液相エピタキシャル成長を得る。In the slider boat for liquid phase epitaxial growth of the present invention, the melt well in the upper boat is divided into two chambers and the two chambers are communicated with each other through pores, thereby making the in-plane composition distribution uniform and achieving good liquid phase epitaxial growth.
以下、本発明の一実施例を図に基づいて詳細に説明する
。Hereinafter, one embodiment of the present invention will be described in detail based on the drawings.
第１図はメルト用のウェル（５）を２部屋に分け、細孔
で両部屋を連通させた断面図である。第１図（ａ）はメ
ルトをセットした状態の図で、メルトは上の部屋にセッ
トされている。この状態でスライダーボートを加熱する
と４００°Ｃ程度でメルトは溶−し細孔を通して下の部
屋へ落下し第１．図（ロ）の状態になる。この落下の際
、溶融メルトは混合され均一になる。このような状態で
メルト（７）と基板（３）に接触させ、温度を下げるこ
とにより、組成の面内均一性が極めて侵れたエピタキシ
ャル層が得られる。なお、第１図では細孔−６１つの場
合を示したが、′ｆｉ数の細孔で上下の部屋を連堺させ
れば、溝造は複雑になるが、メルトの均一化には更に大
きな効果が期待できる。また、部屋を２つ以上にするこ
ともボートの加工が複雑になるが、やはり大きな効果が
期待できる。FIG. 1 is a cross-sectional view showing a melt well (5) divided into two chambers, with the two chambers communicating through a pore. FIG. 1(a) shows the state in which the melt is set, and the melt is set in the upper chamber. When the slider boat is heated in this state, the melt melts at about 400°C and falls through the pores into the chamber below. The state will be as shown in figure (b). During this falling, the molten melt is mixed and becomes homogeneous. By bringing the melt (7) into contact with the substrate (3) in such a state and lowering the temperature, an epitaxial layer with extremely poor in-plane composition uniformity can be obtained. Although Fig. 1 shows a case with 61 pores, if the upper and lower chambers are connected with pores with a number of You can expect good results. Also, creating two or more rooms will complicate the processing of the boat, but it can still be expected to have great effects.
以上のように本発明によれば、液相エピタキシャル成長
で面内の組成分布が極めて均一なエピタキシャルウェー
を得ることができる。As described above, according to the present invention, an epitaxial wafer having an extremely uniform in-plane composition distribution can be obtained by liquid phase epitaxial growth.
第１図（ａ）＠は本発明に係るスライダーボート各工程
の模式断面図、第２図（ａ）〜（Ｃ）は従来のスライダ
ーボートをプロセス順に示した断面図、第８図は石英ア
ンプルに封入されたメルトを示す断面図である。
図において、１・・・下部ボート、２・・・基板用ウェ
ル、８・・・基板、４・・・上部ボート、５・・・メル
ト用ウェル、６・・・蓋、７・・・メルト、８・・・石
英アンプル。
なお、図中、同一符号は同一、または相当部分を示す。Figure 1 (a) @ is a schematic cross-sectional view of each process of the slider boat according to the present invention, Figures 2 (a) to (C) are cross-sectional views showing the conventional slider boat in the order of process, and Figure 8 is a quartz ampoule. FIG. In the figure, 1... Lower boat, 2... Well for substrate, 8... Substrate, 4... Upper boat, 5... Well for melt, 6... Lid, 7... Melt. , 8...quartz ampoule. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
層を成長させるためのメルトを保持するウェルを有し下
部ボートに対しスライドすることが可能な上部ボートお
よび蓋から成る液相成長用スライダーボートに於いて、
メルト保持用ウェルが上下方向に少なくとも２室に分離
しており、各部屋は１つ以上の細孔で連通していること
を特徴とする液相エピタキシャル成長用スライダーボー
ト。A slider boat for liquid phase growth consisting of a lower boat that holds a substrate, an upper boat that has a well that holds a melt for growing an epitaxial layer on the substrate, and can slide relative to the lower boat, and a lid. ,
A slider boat for liquid phase epitaxial growth, characterized in that a melt holding well is vertically separated into at least two chambers, each chamber communicating with the other through one or more pores.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118588A JPH01208393A (en) | 1988-02-12 | 1988-02-12 | Slider boat for liquid-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118588A JPH01208393A (en) | 1988-02-12 | 1988-02-12 | Slider boat for liquid-phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01208393A true JPH01208393A (en) | 1989-08-22 |
Family
ID=12324383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3118588A Pending JPH01208393A (en) | 1988-02-12 | 1988-02-12 | Slider boat for liquid-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01208393A (en) |
-
1988
- 1988-02-12 JP JP3118588A patent/JPH01208393A/en active Pending
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