JPS59115531A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS59115531A JPS59115531A JP57228171A JP22817182A JPS59115531A JP S59115531 A JPS59115531 A JP S59115531A JP 57228171 A JP57228171 A JP 57228171A JP 22817182 A JP22817182 A JP 22817182A JP S59115531 A JPS59115531 A JP S59115531A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- base material
- cdte
- substrate
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
Abstract
Description
【発明の詳細な説明】
＋ａｌ 発明の技術分野
本発明は易蒸発性元素を含む開管系液相エピタキシャル
成長法に係り、特に液相エピタキシャル層内の易蒸発性
元素の組成制御法に関する。DETAILED DESCRIPTION OF THE INVENTION +al Technical Field of the Invention The present invention relates to an open tube liquid phase epitaxial growth method containing an easily vaporizable element, and particularly to a method for controlling the composition of an easily vaporizable element in a liquid phase epitaxial layer.
（ｂ） 技術の背景
赤外線検知素子のような光電変換素子の形成材料として
一般に水銀、カドミウム、テルル（Ｈｌｌ−８Ｃｄｘ
Ｔｅ）のようなエネルギーギャップの狭い多元素半導体
結晶が用いられている。(b) Background of the technology Generally, mercury, cadmium, tellurium (Hll-8Cdx
A multi-element semiconductor crystal with a narrow energy gap such as Te) is used.
このような多元素半導体結晶を素子形成に都合の良いよ
うに大面積でしかも薄層の状態で得るためには、大面積
の結晶の得られ易いテルル化カドミウム（ＣｄＴｅ）の
基板上にＨｇ１−ｘＣｄｘＴｅの結晶層をスライディン
グ法を用いた液相エピタキシャル成長法で形成している
。In order to obtain such a multi-element semiconductor crystal in a large area and in a thin layer state convenient for device formation, Hg1- The xCdxTe crystal layer is formed by a liquid phase epitaxial growth method using a sliding method.
（Ｃ） 従来技術と問題点
従来の液相エピタキシャル成長法に使用される装置の極
く概念的な構成を図に示す。(C) Prior Art and Problems The figure shows a very conceptual configuration of an apparatus used in a conventional liquid phase epitaxial growth method.
図に示すように従来の液相エピタキシャル成長装置は１
反応管１内の水素（Ｈ２）ガス雰囲気中に設置された基
台２の上に置かれた炭素を材料とする支持台３とその上
を滑動するスライド部４より構成された液相エピタキシ
ャル成長治具５を主体とするものである。As shown in the figure, the conventional liquid phase epitaxial growth apparatus has 1
This liquid phase epitaxial growth treatment consists of a support 3 made of carbon placed on a base 2 placed in a hydrogen (H2) gas atmosphere in a reaction tube 1, and a slide section 4 that slides on the support 3. The ingredient 5 is the main ingredient.
前記支持台３にはＣｄＴｅの基板６が埋設されておリ、
スライド部４に設けられた液相母材容器７には形成ずべ
きＨｇ＋−ｘＣｄｘ Ｔｅ結晶層に対応した１１ｇＣｄ
Ｔｅ母材８が収容されている。A CdTe substrate 6 is embedded in the support base 3,
11gCd corresponding to the Hg+-xCdxTe crystal layer that should not be formed in the liquid phase base material container 7 provided in the slide part 4.
A Te base material 8 is accommodated.
一方前記反応管１内には液相エピタキシャル成長治具５
より所定の距離を隔ててｌＩｇ＋−ｘ ｃｄＸＴｅ結晶
の中の易蒸発性元素すなわち水銀を収容した水銀容器１
０が設げられており、さらに前記液相エピタキシャル成
長治具５と水銀容器１０を加熱する加熱炉１１が反応管
１を囲んで設けられている。On the other hand, inside the reaction tube 1 is a liquid phase epitaxial growth jig 5.
A mercury container 1 containing an easily evaporable element, that is, mercury, in lIg+-x cdXTe crystal at a predetermined distance.
Further, a heating furnace 11 for heating the liquid phase epitaxial growth jig 5 and the mercury container 10 is provided surrounding the reaction tube 1.
ここに、加熱炉１１の軸方向の温度分布は、液相エピタ
キシャル成長冶具５の存在する範囲は５００℃、水銀容
器１０の存在する範囲では２６０℃になるように温度調
節が行われている。Here, the temperature distribution in the axial direction of the heating furnace 11 is adjusted so that the range where the liquid phase epitaxial growth jig 5 exists is 500°C and the range where the mercury container 10 exists is 260°C.
まずスライド部４に設けられたｌ＆相母材容器７内のｌ
ｌｇＣｄＴｅ合金を溶融して液相母材８とし、スライド
部４を→印方向に滑動させて移動し、 ＣｄＴｅ基板６
上に静置してから液相エピタキシャル成長治具５の加熱
部の温度を約１°Ｃ／分の冷却速度で低下させてＣｄＴ
ｅ基板６の上にＨｇ＋−ｘ ｃａＸＴｅの液相エピタキ
シャル層を成長させていく。この際、１１ｇは蒸気圧が
高く容易に前記液相母材８よりｌ’ｉｌ脱していくので
、これを防止するために水銀容器ｌＯ内の水銀蒸気を反
応管１内の水素ガスをキャリアガスとして反応管１内を
満たし、水銀容器１０の加熱部の温度を制御してその蒸
気圧を液相母材８の水銀蒸気圧と等しくして平衡させる
。First, the l provided in the slide part 4 & the l in the phase base material container 7
The lgCdTe alloy is melted to form a liquid phase base material 8, and the slide portion 4 is slid in the → direction to form a CdTe substrate 6.
Then, the temperature of the heating part of the liquid phase epitaxial growth jig 5 is lowered at a cooling rate of about 1°C/min to form CdT.
A liquid phase epitaxial layer of Hg+-x caXTe is grown on the e-substrate 6. At this time, 11g has a high vapor pressure and easily escapes from the liquid phase base material 8, so in order to prevent this, mercury vapor in the mercury container 10 is replaced with hydrogen gas in the reaction tube 1 as a carrier gas. The temperature of the heating section of the mercury container 10 is controlled to make its vapor pressure equal to the mercury vapor pressure of the liquid-phase base material 8 to achieve equilibrium.
上述の従来の液相エピタキシャル成長法においては、液
相母材容器７内の溶融したｌｌｇＣｄＴｅ合金は凝固点
に極めて近い５００℃に保たれているのであるが、該液
相母材８ばなかなか均一の溶融したＨｇＣｄＴｅにはな
り難く、偏析によりＨｇの多い固体の結晶片をも含んで
いて結晶核を構成するので、これが原因で形成された液
相エピタキシャル成長法によるＨｇ＋−ｘＣｄｘ Ｔｅ
結晶の表面に凸凹を生じ種々の欠陥を誘発することが多
かった。In the conventional liquid phase epitaxial growth method described above, the molten llgCdTe alloy in the liquid phase base material container 7 is kept at 500°C, which is extremely close to the freezing point, but the liquid phase base material 8 is not melted uniformly. Hg+-xCdx Te formed by liquid phase epitaxial growth method is difficult to form into Hg+-xCdTe, which contains solid crystal fragments with a large amount of Hg due to segregation and forms crystal nuclei.
This often causes unevenness on the surface of the crystal and induces various defects.
あるいは液相母材８の溶融時にｌ１ｇｐ４気が過度に液
相母料８に吸収されて生成したｌ１ｇ、−ｘｃｃｌｘＴ
ｅ結晶の成分が所定値と相違するという問題も発生して
いた。Alternatively, l1g, -xcclxT generated by excessive l1gp4 gas being absorbed into the liquid phase base material 8 when the liquid phase base material 8 is melted.
There also occurred a problem that the components of the e-crystal differed from predetermined values.
上述の液相母材８の成分の不均一の問題を解消するため
に液相母材８の溶融温度を５００°Ｃ以上に上げること
も考えられるにノれども、その時は液相母材８の１１ｇ
蒸気圧が高くなり、これと平衡する反応管１内のＨｇ蒸
気圧も高くせねばならず、さらに前記液相母材８を凝固
させる迄の液相母材８の温度の変化に応じてうまく平衡
して反応管１内の１１ｇ蒸気圧を調整出来るように水銀
容器１０の加熱部を制御せねばならず、これは極めて困
難な操作で実際的ではない。Although it is possible to raise the melting temperature of the liquid phase base material 8 to 500°C or higher in order to solve the problem of non-uniformity of the components of the liquid phase base material 8 described above, in that case, the liquid phase base material 8 11g of
As the vapor pressure increases, the Hg vapor pressure within the reaction tube 1 that is in equilibrium with this must also be increased, and further, the Hg vapor pressure in the reaction tube 1 must be increased depending on the temperature change of the liquid phase base material 8 until the liquid phase base material 8 is solidified. The heating section of the mercury container 10 must be controlled so as to balance the 11g vapor pressure within the reaction tube 1, which is an extremely difficult operation and impractical.
（ｄｉ 発明の目的
本発明は前述の点に鑑みなされたもので、上に述べた欠
点を除去するために前記液を目母月８を均一な相に形成
する方法を提供しようとするものである。(di) Purpose of the Invention The present invention has been made in view of the above-mentioned points, and it is an object of the present invention to provide a method for forming the eyelid 8 into a uniform phase using the liquid in order to eliminate the above-mentioned drawbacks. be.
（ｅｌ 発明の構成
上記の発明の目的は、易蒸発性元素を一成分とする多元
素半導体結晶の開管系反応管内におりる液相エピタキシ
ャル成長法で形成する場合、形成すべき前記多元素半導
体結晶におりる所定成分の中、前記易蒸発性元素の成分
のみを所定値より低くした。あるいは全く含まない熔融
体を液相母材とし、蒸気状の易蒸発性元素を前記反応管
内に導入し、その蒸気圧と前記液相母材の温度と成長時
間とを制御することにより所定の多元素半導体結晶を形
成することを特徴とする液相エピタキシャル成長法によ
り容易に達成される。(el) Structure of the Invention The object of the above invention is to provide a multi-element semiconductor crystal to be formed when the multi-element semiconductor crystal containing an easily vaporizable element as one component is formed by a liquid phase epitaxial growth method in an open reaction tube. Among the predetermined components contained in the crystal, only the component of the easily vaporizable element is lowered below a predetermined value, or a melt containing no element at all is used as a liquid phase base material, and a vaporized easily vaporizable element is introduced into the reaction tube. However, this can be easily achieved by a liquid phase epitaxial growth method, which is characterized in that a predetermined multi-element semiconductor crystal is formed by controlling its vapor pressure, the temperature of the liquid phase base material, and the growth time.
［ｆｌ 発明の実施例 以下本発明の実施例について説明しよう。[fl Embodiments of the invention Examples of the present invention will be described below.
装置は図に示すもので従来と変わりはない。本発明に基
づく方法では前記液相母材８としては従来のＨｇＣｄＴ
ｅ３元合金の代わりにＣｄＴｅの２元合金を使用する。The equipment shown in the figure is the same as before. In the method based on the present invention, the liquid phase base material 8 is conventional HgCdT.
A binary alloy of CdTe is used instead of a ternary alloy.
まず、水銀容器１０の加熱部の温度を調整して反応管１
内の１１ｇ蒸気圧を目標のｆｌにＣｄＴｅ融液からの５
００°Ｃにおりる１１ｇ蒸気圧と同一に維持する。First, the temperature of the heating part of the mercury container 10 is adjusted and the temperature of the reaction tube 1 is adjusted.
5 from the CdTe melt to the target fl.
Maintain the same 11g vapor pressure as at 00°C.
次いで液相エピタキシャル治具の加熱部により ５００
℃に加熱され溶融したＣｄＴｅ合金の液相母材８を従来
の方法でＣｄＴｅ基板６の上に静置する。Then, the heating part of the liquid phase epitaxial jig
A liquid phase base material 8 of a CdTe alloy heated to and melted at 0.degree. C. is placed on a CdTe substrate 6 by a conventional method.
一方ＣｄＴｅ ２元合金の融点は約４５０℃であるので
。On the other hand, since the melting point of CdTe binary alloy is about 450°C.
前記の５００℃ではその熔融液面に触れるＩｌ、蒸気は
容易にかつ極めて均質に液相母材８のなかに拡散浸透し
てゆくので所定の時間の後は該液相母材８は均質な目標
の成分のＨｇＣｄＴｅ合金の溶融体に変成する。しかる
後は従来の方法でエビクキシャル成長をさせて所望の凸
凹のない良質の結晶を容易に得ることが出来る。At the above-mentioned temperature of 500°C, the Il and vapor that come into contact with the molten liquid surface diffuse and permeate into the liquid phase base material 8 easily and extremely homogeneously, so that the liquid phase base material 8 becomes homogeneous after a predetermined period of time. It is transformed into a melt of HgCdTe alloy of the target composition. After that, evixaxial growth is performed using a conventional method to easily obtain a high-quality crystal without desired unevenness.
なお以上の説明から明らかなように液相用、材８として
は単にＣｄＴｅ２元合金にとどまらず、目標の１１ｇＣ
ｄＴｅ合金の成分にくらべて易蒸発性元素のｌ１ｇ成分
を減じることにより、その溶融点を５００°Ｃより低く
り、５００°Ｃで偏析による結晶片を含まない限り、
ＩＩｇＣｄＴｅの３九合金も液相母材８とし一ζ使用出
来る。As is clear from the above explanation, the material 8 for the liquid phase is not just a CdTe binary alloy, but also the target 11gC
By reducing the l1g component of easily vaporizable elements compared to the components of the dTe alloy, the melting point is lower than 500°C, and as long as it does not contain crystal fragments due to segregation at 500°C,
39 alloy of IIgCdTe can also be used as the liquid phase matrix 8.
ｉｇ） 発明の効果
以上の説明から明らかなように１本発明による液相エピ
タキシャル成長法に従えば、平坦な良質の易蒸発性元素
を一成分とする化合物半導体の結晶を容易に得ることが
出来るという効果がある。ig) Effects of the Invention As is clear from the above explanation, by following the liquid phase epitaxial growth method according to the present invention, it is possible to easily obtain a flat crystal of a compound semiconductor containing an easily vaporizable element as one component. effective.
図は従来の液相エピクキシャル成長法に使用される装置
の極く概念的な構成図である。
図において、１は紋応管、２は基台、３は支持台、４は
スライド部、５は液相エピタキシャル成長治具、６はＣ
ｄＴｅ基板、７は液相母材容器、８は液相母材、９ば水
銀、１０は水銀容器、１１は加熱炉をそれぞれ示す。The figure is a very conceptual block diagram of an apparatus used in a conventional liquid phase epitaxial growth method. In the figure, 1 is a reaction tube, 2 is a base, 3 is a support stand, 4 is a slide part, 5 is a liquid phase epitaxial growth jig, and 6 is a C
dTe substrate, 7 a liquid phase base material container, 8 a liquid phase base material, 9 mercury, 10 a mercury container, and 11 a heating furnace, respectively.
Claims (1)
反応管内における液相エピタキシャル成長法であって、
形成すべき前記多元素半導体結晶におりる所定成分の中
、前記易蒸発性元素の成分のみを所定値より低くした。 あるいは全く含まない溶融体を液相母材とし、蒸気状の
易蒸発性元素を前記反応管内に導入し、その蒸気圧と前
記液相母材の温度と成長時間とを制御することにより所
定の多元素半導体結晶を形成することを特徴とする液相
エピタキシャル成長法。[Claims] A liquid phase epitaxial growth method in an open reaction tube for a multi-element semiconductor crystal containing an easily vaporizable element as one component, comprising:
Among the predetermined components included in the multi-element semiconductor crystal to be formed, only the component of the easily evaporable element was set lower than a predetermined value. Alternatively, a predetermined temperature can be achieved by using a completely free melt as a liquid phase base material, introducing a vaporous easily evaporable element into the reaction tube, and controlling its vapor pressure, the temperature of the liquid phase base material, and the growth time. A liquid phase epitaxial growth method characterized by forming multi-element semiconductor crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228171A JPS59115531A (en) | 1982-12-22 | 1982-12-22 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228171A JPS59115531A (en) | 1982-12-22 | 1982-12-22 | Liquid phase epitaxial growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59115531A true JPS59115531A (en) | 1984-07-04 |
Family
ID=16872331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57228171A Pending JPS59115531A (en) | 1982-12-22 | 1982-12-22 | Liquid phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59115531A (en) |
-
1982
- 1982-12-22 JP JP57228171A patent/JPS59115531A/en active Pending
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