JPH0217564U - - Google Patents
Info
- Publication number
- JPH0217564U JPH0217564U JP9389888U JP9389888U JPH0217564U JP H0217564 U JPH0217564 U JP H0217564U JP 9389888 U JP9389888 U JP 9389888U JP 9389888 U JP9389888 U JP 9389888U JP H0217564 U JPH0217564 U JP H0217564U
- Authority
- JP
- Japan
- Prior art keywords
- rod
- holder
- seed
- penetrated
- holds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の一実施例の断面図である。
１……白金ホルダー、２……サフアイヤ棒、３
……石英円筒、４……種子結晶。
FIG. 1 is a sectional view of an embodiment of the present invention. 1...Platinum holder, 2...Sapphire stick, 3
...Quartz cylinder, 4...Seed crystal.
Claims (1)
支持される絶縁性の棒と、該棒が貫通し前記棒の
中間に固着される３００℃の耐熱性を有する上方
に開口したるつぼ型の絶縁体とを含むことを特徴
とする種子ホルダー。 An insulating rod that holds a seed crystal at its lower end and whose upper end is supported by a platinum holder, and an upwardly opened crucible-shaped insulator with heat resistance of 300° C. that is penetrated by the rod and fixed in the middle of the rod. A seed holder comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988093898U JPH072616Y2 (en) | 1988-07-14 | 1988-07-14 | Seed holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988093898U JPH072616Y2 (en) | 1988-07-14 | 1988-07-14 | Seed holder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0217564U true JPH0217564U (en) | 1990-02-05 |
| JPH072616Y2 JPH072616Y2 (en) | 1995-01-25 |
Family
ID=31318376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988093898U Expired - Lifetime JPH072616Y2 (en) | 1988-07-14 | 1988-07-14 | Seed holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH072616Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54123585A (en) * | 1978-03-20 | 1979-09-25 | Mitsubishi Metal Corp | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt |
| JPS6430367U (en) * | 1987-08-14 | 1989-02-23 |
-
1988
- 1988-07-14 JP JP1988093898U patent/JPH072616Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54123585A (en) * | 1978-03-20 | 1979-09-25 | Mitsubishi Metal Corp | Method and apparatus for growing high dissociation pressure compound single crystal for semiconductor by pulling double-sealed melt |
| JPS6430367U (en) * | 1987-08-14 | 1989-02-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH072616Y2 (en) | 1995-01-25 |