JPS6419000A - Production equipment for cdte crystal - Google Patents
Production equipment for cdte crystalInfo
- Publication number
- JPS6419000A JPS6419000A JP17381387A JP17381387A JPS6419000A JP S6419000 A JPS6419000 A JP S6419000A JP 17381387 A JP17381387 A JP 17381387A JP 17381387 A JP17381387 A JP 17381387A JP S6419000 A JPS6419000 A JP S6419000A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- molten liquid
- cdte
- crucible
- feedstock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To provide the titled equipment to obtain high-purity CdTe crystal free from contamination of B by separating liquid B2O3 from the feedstock molten liquid. CONSTITUTION:Within a pressure vessel 16 filled with an inert gas, a growth vessel 3, outer crucible 1 into which B2O3 molten liquid 10 has been put, supported by a lower shaft 5 capable of both virtical motion and revolution, and inner crucible 2 floating on the molten liquid 10 are equipped. And the lower end of the vessel 3 is immersed in the molten liquid 10 and sealed, the upper end of the vessel 3 being fitted with a pan 11 for B2O3 molten liquid. Around the pan 11, a space heater 13 to melt B2O3 is provided, and the lower inner wall of the vessel 3 is fitted with a Cd reservoir 4. The CdTe feedstock in the crucible 2, the B2O3 10 in the crucible 1, and the Cd in the reservoir 4 are respectively melted using a main heater 13 to fill the inner space of the vessel 3 with Cd gas. Thence, the upper shaft 6 with CdTe seed crystal 8 at the tip is made to descend to bring said seed crystal 8 into contact with the molten feedstock 10 followed by lifting the seed crystal 8 while monitoring through a view rod 15, thus making CdTe single crystal 9 grow.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173813A JP2585276B2 (en) | 1987-07-14 | 1987-07-14 | CdTe crystal manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173813A JP2585276B2 (en) | 1987-07-14 | 1987-07-14 | CdTe crystal manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6419000A true JPS6419000A (en) | 1989-01-23 |
JP2585276B2 JP2585276B2 (en) | 1997-02-26 |
Family
ID=15967631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62173813A Expired - Lifetime JP2585276B2 (en) | 1987-07-14 | 1987-07-14 | CdTe crystal manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2585276B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111809235A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
CN111809243A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5227881U (en) * | 1975-08-19 | 1977-02-26 | ||
JPS5580796A (en) * | 1978-12-12 | 1980-06-18 | Mitsubishi Metal Corp | Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method |
-
1987
- 1987-07-14 JP JP62173813A patent/JP2585276B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5227881U (en) * | 1975-08-19 | 1977-02-26 | ||
JPS5580796A (en) * | 1978-12-12 | 1980-06-18 | Mitsubishi Metal Corp | Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111809235A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
CN111809243A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
CN111809235B (en) * | 2020-09-08 | 2020-12-22 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
Also Published As
Publication number | Publication date |
---|---|
JP2585276B2 (en) | 1997-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1053004A (en) | Drawing dielectric optical waveguides | |
GB1374065A (en) | Optical control of crystal growth | |
JPS6419000A (en) | Production equipment for cdte crystal | |
JPS59213697A (en) | Pulling device for single crystal semiconductor | |
ES8503731A1 (en) | Aluminium electrolytic reduction cells. | |
JPH0314800B2 (en) | ||
JP2861240B2 (en) | Crucible for single crystal growth | |
JPS6476992A (en) | Apparatus for growing single crystal | |
JPS6445799A (en) | Production of cadmium telluride based crystal | |
CN212404351U (en) | Crystal growth crucible | |
CN217733339U (en) | Heater structure for heating crystal | |
JPS54162686A (en) | Preparation of oxide single crystal | |
JP2830306B2 (en) | Compound semiconductor crystal manufacturing equipment | |
JPS6437492A (en) | Single crystal growing apparatus | |
JPS5551795A (en) | Artificial rock crystal and growing method therefor | |
KR900003427A (en) | High dissociation compound semiconductor single crystal growth method and apparatus | |
JPS56104797A (en) | Method of uniform doping by liquid capsule method | |
JPH0354187A (en) | Single crystal producing device | |
JPS5562881A (en) | Production of multicomponent semiconductor crystal | |
JPS61281100A (en) | Production of silicon single crystal | |
JPS5692191A (en) | Production of single crystal and producing device using this method | |
JPS6445796A (en) | Apparatus for pulling up si single crystal and method therefor | |
JPS6437494A (en) | Single crystal producing apparatus | |
JPS5562884A (en) | Chrysoberyl single crystal showing cat's-eye effect and production thereof | |
JPS5756397A (en) | Manufacture of single crystal |