JPS6419000A - Production equipment for cdte crystal - Google Patents

Production equipment for cdte crystal

Info

Publication number
JPS6419000A
JPS6419000A JP17381387A JP17381387A JPS6419000A JP S6419000 A JPS6419000 A JP S6419000A JP 17381387 A JP17381387 A JP 17381387A JP 17381387 A JP17381387 A JP 17381387A JP S6419000 A JPS6419000 A JP S6419000A
Authority
JP
Japan
Prior art keywords
vessel
molten liquid
cdte
crucible
feedstock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17381387A
Other languages
Japanese (ja)
Other versions
JP2585276B2 (en
Inventor
Toshihiro Kotani
Masami Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62173813A priority Critical patent/JP2585276B2/en
Publication of JPS6419000A publication Critical patent/JPS6419000A/en
Application granted granted Critical
Publication of JP2585276B2 publication Critical patent/JP2585276B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To provide the titled equipment to obtain high-purity CdTe crystal free from contamination of B by separating liquid B2O3 from the feedstock molten liquid. CONSTITUTION:Within a pressure vessel 16 filled with an inert gas, a growth vessel 3, outer crucible 1 into which B2O3 molten liquid 10 has been put, supported by a lower shaft 5 capable of both virtical motion and revolution, and inner crucible 2 floating on the molten liquid 10 are equipped. And the lower end of the vessel 3 is immersed in the molten liquid 10 and sealed, the upper end of the vessel 3 being fitted with a pan 11 for B2O3 molten liquid. Around the pan 11, a space heater 13 to melt B2O3 is provided, and the lower inner wall of the vessel 3 is fitted with a Cd reservoir 4. The CdTe feedstock in the crucible 2, the B2O3 10 in the crucible 1, and the Cd in the reservoir 4 are respectively melted using a main heater 13 to fill the inner space of the vessel 3 with Cd gas. Thence, the upper shaft 6 with CdTe seed crystal 8 at the tip is made to descend to bring said seed crystal 8 into contact with the molten feedstock 10 followed by lifting the seed crystal 8 while monitoring through a view rod 15, thus making CdTe single crystal 9 grow.
JP62173813A 1987-07-14 1987-07-14 CdTe crystal manufacturing equipment Expired - Lifetime JP2585276B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173813A JP2585276B2 (en) 1987-07-14 1987-07-14 CdTe crystal manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173813A JP2585276B2 (en) 1987-07-14 1987-07-14 CdTe crystal manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS6419000A true JPS6419000A (en) 1989-01-23
JP2585276B2 JP2585276B2 (en) 1997-02-26

Family

ID=15967631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173813A Expired - Lifetime JP2585276B2 (en) 1987-07-14 1987-07-14 CdTe crystal manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2585276B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111809243A (en) * 2020-09-08 2020-10-23 宁波碲晶光电科技有限公司 Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material
CN111809235A (en) * 2020-09-08 2020-10-23 宁波碲晶光电科技有限公司 Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227881U (en) * 1975-08-19 1977-02-26
JPS5580796A (en) * 1978-12-12 1980-06-18 Mitsubishi Metal Corp Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227881U (en) * 1975-08-19 1977-02-26
JPS5580796A (en) * 1978-12-12 1980-06-18 Mitsubishi Metal Corp Method and device for growing high dissociation pressure compound single crystal for semiconductor by double-sealed melt pulling method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111809243A (en) * 2020-09-08 2020-10-23 宁波碲晶光电科技有限公司 Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material
CN111809235A (en) * 2020-09-08 2020-10-23 宁波碲晶光电科技有限公司 Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material
CN111809235B (en) * 2020-09-08 2020-12-22 宁波碲晶光电科技有限公司 Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

Also Published As

Publication number Publication date
JP2585276B2 (en) 1997-02-26

Similar Documents

Publication Publication Date Title
CA1053004A (en) Drawing dielectric optical waveguides
GB1374065A (en) Optical control of crystal growth
JPS6419000A (en) Production equipment for cdte crystal
JPS59213697A (en) Pulling device for single crystal semiconductor
ES8503731A1 (en) Aluminium electrolytic reduction cells.
JPH0314800B2 (en)
JP2861240B2 (en) Crucible for single crystal growth
JPS6445799A (en) Production of cadmium telluride based crystal
CN212404351U (en) Crystal growth crucible
ES2006067A6 (en) PROCESS FOR PRODUCING p-XYLOL WITH A PURITY OF AT LEAST 99.5 %
CN217733339U (en) Heater structure for heating crystal
JPS54162686A (en) Preparation of oxide single crystal
JP2830306B2 (en) Compound semiconductor crystal manufacturing equipment
JPS6437492A (en) Single crystal growing apparatus
JPS5551795A (en) Artificial rock crystal and growing method therefor
KR900003427A (en) High dissociation compound semiconductor single crystal growth method and apparatus
JPS56104797A (en) Method of uniform doping by liquid capsule method
JPS5562881A (en) Production of multicomponent semiconductor crystal
JPS61281100A (en) Production of silicon single crystal
JPS6456392A (en) Method for growing single crystal
JPS5692191A (en) Production of single crystal and producing device using this method
JPS6445796A (en) Apparatus for pulling up si single crystal and method therefor
JPS6437494A (en) Single crystal producing apparatus
JPS5756397A (en) Manufacture of single crystal
JPH0354187A (en) Single crystal producing device