JPS5556660A - Manufacture of charge-coupled device - Google Patents

Manufacture of charge-coupled device

Info

Publication number
JPS5556660A
JPS5556660A JP13018078A JP13018078A JPS5556660A JP S5556660 A JPS5556660 A JP S5556660A JP 13018078 A JP13018078 A JP 13018078A JP 13018078 A JP13018078 A JP 13018078A JP S5556660 A JPS5556660 A JP S5556660A
Authority
JP
Japan
Prior art keywords
transfer electrodes
breaking
film
charge
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13018078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115592B2 (enrdf_load_stackoverflow
Inventor
Tadao Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP13018078A priority Critical patent/JPS5556660A/ja
Publication of JPS5556660A publication Critical patent/JPS5556660A/ja
Publication of JPS6115592B2 publication Critical patent/JPS6115592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP13018078A 1978-10-20 1978-10-20 Manufacture of charge-coupled device Granted JPS5556660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13018078A JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13018078A JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Publications (2)

Publication Number Publication Date
JPS5556660A true JPS5556660A (en) 1980-04-25
JPS6115592B2 JPS6115592B2 (enrdf_load_stackoverflow) 1986-04-24

Family

ID=15027959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13018078A Granted JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Country Status (1)

Country Link
JP (1) JPS5556660A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
US8448716B2 (en) 2007-10-19 2013-05-28 Hideo Yoshida Fire extinguisher gas ejector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
US8448716B2 (en) 2007-10-19 2013-05-28 Hideo Yoshida Fire extinguisher gas ejector

Also Published As

Publication number Publication date
JPS6115592B2 (enrdf_load_stackoverflow) 1986-04-24

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