JPS5543888A - Manufacture of junction gate type field effect transistor - Google Patents
Manufacture of junction gate type field effect transistorInfo
- Publication number
- JPS5543888A JPS5543888A JP11776778A JP11776778A JPS5543888A JP S5543888 A JPS5543888 A JP S5543888A JP 11776778 A JP11776778 A JP 11776778A JP 11776778 A JP11776778 A JP 11776778A JP S5543888 A JPS5543888 A JP S5543888A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- photoresist
- slit
- manufacture
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a gate of less than 10μm by evaporating a gate-forming metal from a diagonal direction and accurately control the interval between source and gate by the spacer between photoresist and compound semiconductor and the amount mount of compound semiconductor etching.
CONSTITUTION: On semi-insulating GaAs base 30 are placed in succession high-resistance epitaxial buffer layer 41, a GaAs epitaxial wafer on which active epitaxial layer 42 is grown, SiO2 film 43, and photoresist 44. Next, a slit is provided on the photoresist, and SiO2 film 43 is etched wider than the width of the slit. Then, GaAs active epitaxial layer 32 is etched. Gate metal 45 is evaporated on too of this from above at an angle predetermined in reference to the open cut, and thereby gate 451, which is narrower than the width of the slit of the photoresist, is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11776778A JPS5543888A (en) | 1978-09-22 | 1978-09-22 | Manufacture of junction gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11776778A JPS5543888A (en) | 1978-09-22 | 1978-09-22 | Manufacture of junction gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543888A true JPS5543888A (en) | 1980-03-27 |
Family
ID=14719807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11776778A Pending JPS5543888A (en) | 1978-09-22 | 1978-09-22 | Manufacture of junction gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543888A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175773A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Field effect transistor |
JPS59205767A (en) * | 1983-05-09 | 1984-11-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61177781A (en) * | 1985-02-02 | 1986-08-09 | Sony Corp | Field effect transistor |
JPS61280672A (en) * | 1985-05-20 | 1986-12-11 | Sanyo Electric Co Ltd | Manufacture of compound semiconductor device |
US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929067A (en) * | 1972-07-12 | 1974-03-15 |
-
1978
- 1978-09-22 JP JP11776778A patent/JPS5543888A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929067A (en) * | 1972-07-12 | 1974-03-15 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
JPS59175773A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Field effect transistor |
JPS59205767A (en) * | 1983-05-09 | 1984-11-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61177781A (en) * | 1985-02-02 | 1986-08-09 | Sony Corp | Field effect transistor |
JPS61280672A (en) * | 1985-05-20 | 1986-12-11 | Sanyo Electric Co Ltd | Manufacture of compound semiconductor device |
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