JPS5543888A - Manufacture of junction gate type field effect transistor - Google Patents

Manufacture of junction gate type field effect transistor

Info

Publication number
JPS5543888A
JPS5543888A JP11776778A JP11776778A JPS5543888A JP S5543888 A JPS5543888 A JP S5543888A JP 11776778 A JP11776778 A JP 11776778A JP 11776778 A JP11776778 A JP 11776778A JP S5543888 A JPS5543888 A JP S5543888A
Authority
JP
Japan
Prior art keywords
gate
photoresist
slit
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11776778A
Other languages
Japanese (ja)
Inventor
Fumio Hasegawa
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11776778A priority Critical patent/JPS5543888A/en
Publication of JPS5543888A publication Critical patent/JPS5543888A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a gate of less than 10μm by evaporating a gate-forming metal from a diagonal direction and accurately control the interval between source and gate by the spacer between photoresist and compound semiconductor and the amount mount of compound semiconductor etching.
CONSTITUTION: On semi-insulating GaAs base 30 are placed in succession high-resistance epitaxial buffer layer 41, a GaAs epitaxial wafer on which active epitaxial layer 42 is grown, SiO2 film 43, and photoresist 44. Next, a slit is provided on the photoresist, and SiO2 film 43 is etched wider than the width of the slit. Then, GaAs active epitaxial layer 32 is etched. Gate metal 45 is evaporated on too of this from above at an angle predetermined in reference to the open cut, and thereby gate 451, which is narrower than the width of the slit of the photoresist, is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP11776778A 1978-09-22 1978-09-22 Manufacture of junction gate type field effect transistor Pending JPS5543888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11776778A JPS5543888A (en) 1978-09-22 1978-09-22 Manufacture of junction gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11776778A JPS5543888A (en) 1978-09-22 1978-09-22 Manufacture of junction gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5543888A true JPS5543888A (en) 1980-03-27

Family

ID=14719807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11776778A Pending JPS5543888A (en) 1978-09-22 1978-09-22 Manufacture of junction gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5543888A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175773A (en) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp Field effect transistor
JPS59205767A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61177781A (en) * 1985-02-02 1986-08-09 Sony Corp Field effect transistor
JPS61280672A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Manufacture of compound semiconductor device
US4845534A (en) * 1981-01-30 1989-07-04 Fujitsu Limited Field effect semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929067A (en) * 1972-07-12 1974-03-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929067A (en) * 1972-07-12 1974-03-15

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845534A (en) * 1981-01-30 1989-07-04 Fujitsu Limited Field effect semiconductor device
JPS59175773A (en) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp Field effect transistor
JPS59205767A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61177781A (en) * 1985-02-02 1986-08-09 Sony Corp Field effect transistor
JPS61280672A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Manufacture of compound semiconductor device

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