JPS5543850A - Manufacture of complementary mos semiconductor device - Google Patents

Manufacture of complementary mos semiconductor device

Info

Publication number
JPS5543850A
JPS5543850A JP11653578A JP11653578A JPS5543850A JP S5543850 A JPS5543850 A JP S5543850A JP 11653578 A JP11653578 A JP 11653578A JP 11653578 A JP11653578 A JP 11653578A JP S5543850 A JPS5543850 A JP S5543850A
Authority
JP
Japan
Prior art keywords
drain
ion
film
source
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11653578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115595B2 (enExample
Inventor
Koichi Nagasawa
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11653578A priority Critical patent/JPS5543850A/ja
Publication of JPS5543850A publication Critical patent/JPS5543850A/ja
Publication of JPS6115595B2 publication Critical patent/JPS6115595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP11653578A 1978-09-25 1978-09-25 Manufacture of complementary mos semiconductor device Granted JPS5543850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11653578A JPS5543850A (en) 1978-09-25 1978-09-25 Manufacture of complementary mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11653578A JPS5543850A (en) 1978-09-25 1978-09-25 Manufacture of complementary mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS5543850A true JPS5543850A (en) 1980-03-27
JPS6115595B2 JPS6115595B2 (enExample) 1986-04-24

Family

ID=14689522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11653578A Granted JPS5543850A (en) 1978-09-25 1978-09-25 Manufacture of complementary mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5543850A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923557A (ja) * 1982-07-12 1984-02-07 インテル・コ−ポレ−シヨン 相補形金属↓−酸化膜↓−半導体（ｃｍｏｓ）トランジスタの製造方法
JPS59111358A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Ｃｍｏｓ構造体の製造方法
JPS59202660A (ja) * 1983-04-21 1984-11-16 シ−メンス・アクチエンゲゼルシヤフト 電界効果トランジスタ回路の製造方法
JPS59214253A (ja) * 1983-05-20 1984-12-04 Matsushita Electronics Corp 相補型ｍｏｓ集積回路の製造方法
JPS6267815A (ja) * 1985-09-20 1987-03-27 Toshiba Corp 半導体装置の製造方法
JPS6341101A (ja) * 1986-08-06 1988-02-22 株式会社ト−マ 小径木ひき板とその製造方法
JPS63182101A (ja) * 1987-01-23 1988-07-27 株式会社ト−マ 小径木ひき板積層板とその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923557A (ja) * 1982-07-12 1984-02-07 インテル・コ−ポレ−シヨン 相補形金属↓−酸化膜↓−半導体（ｃｍｏｓ）トランジスタの製造方法
JPS59111358A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Ｃｍｏｓ構造体の製造方法
JPS59202660A (ja) * 1983-04-21 1984-11-16 シ−メンス・アクチエンゲゼルシヤフト 電界効果トランジスタ回路の製造方法
JPS59214253A (ja) * 1983-05-20 1984-12-04 Matsushita Electronics Corp 相補型ｍｏｓ集積回路の製造方法
JPS6267815A (ja) * 1985-09-20 1987-03-27 Toshiba Corp 半導体装置の製造方法
JPS6341101A (ja) * 1986-08-06 1988-02-22 株式会社ト−マ 小径木ひき板とその製造方法
JPS63182101A (ja) * 1987-01-23 1988-07-27 株式会社ト−マ 小径木ひき板積層板とその製造方法

Also Published As

Publication number Publication date
JPS6115595B2 (enExample) 1986-04-24

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