JPS5543840A - Power distributing structure of iil element - Google Patents
Power distributing structure of iil elementInfo
- Publication number
- JPS5543840A JPS5543840A JP11652178A JP11652178A JPS5543840A JP S5543840 A JPS5543840 A JP S5543840A JP 11652178 A JP11652178 A JP 11652178A JP 11652178 A JP11652178 A JP 11652178A JP S5543840 A JPS5543840 A JP S5543840A
- Authority
- JP
- Japan
- Prior art keywords
- gnd
- injector
- iil
- pad
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Abstract
PURPOSE:To even potential difference on chip between injector and GND of each IIL gate by changing the width of a power wiring connected in common to IIL gates of more than one gradually in accordance with current flowing. CONSTITUTION:In IC, LSI tip 6 using an IIL device, a pad 2 for injector current supply and a pad 4 for GND are provided oppositely each other. Then, a metal wiring for the injector current supply is arranged wider in width in accordance as it comes near to the pad 2 for injector and that for GND also wider in accordance as it comes near to the pad 4 for GND. By arranging, such, a fluctuation on chip in potential drop on the metal wiring for injector and potential rise on the metal wiring for GND becomes linear with a nearly even grade, and thus a potential difference between injector and GND of each IIL gate can be evened on chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11652178A JPS5543840A (en) | 1978-09-25 | 1978-09-25 | Power distributing structure of iil element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11652178A JPS5543840A (en) | 1978-09-25 | 1978-09-25 | Power distributing structure of iil element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543840A true JPS5543840A (en) | 1980-03-27 |
Family
ID=14689187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11652178A Pending JPS5543840A (en) | 1978-09-25 | 1978-09-25 | Power distributing structure of iil element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543840A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844743A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS60143647A (en) * | 1983-09-09 | 1985-07-29 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Integrated circuit chip structure for reducing inductance ofcircuit and provicing voltage gradient controlled |
JPH03163865A (en) * | 1990-11-02 | 1991-07-15 | Toshiba Corp | Semiconductor integrated circuit device |
JPH0653211A (en) * | 1991-01-22 | 1994-02-25 | Nec Corp | Resin-sealed semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52135279A (en) * | 1976-05-07 | 1977-11-12 | Toshiba Corp | Semiconductor integrated circuit |
-
1978
- 1978-09-25 JP JP11652178A patent/JPS5543840A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52135279A (en) * | 1976-05-07 | 1977-11-12 | Toshiba Corp | Semiconductor integrated circuit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844743A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS60143647A (en) * | 1983-09-09 | 1985-07-29 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Integrated circuit chip structure for reducing inductance ofcircuit and provicing voltage gradient controlled |
JPH03163865A (en) * | 1990-11-02 | 1991-07-15 | Toshiba Corp | Semiconductor integrated circuit device |
JPH0642529B2 (en) * | 1990-11-02 | 1994-06-01 | 株式会社東芝 | Semiconductor integrated circuit device |
JPH0653211A (en) * | 1991-01-22 | 1994-02-25 | Nec Corp | Resin-sealed semiconductor integrated circuit |
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