JPS5662355A - Electrostatic breakage preventive element - Google Patents

Electrostatic breakage preventive element

Info

Publication number
JPS5662355A
JPS5662355A JP13761979A JP13761979A JPS5662355A JP S5662355 A JPS5662355 A JP S5662355A JP 13761979 A JP13761979 A JP 13761979A JP 13761979 A JP13761979 A JP 13761979A JP S5662355 A JPS5662355 A JP S5662355A
Authority
JP
Japan
Prior art keywords
areas
short circuited
transistor
current
burying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13761979A
Other languages
Japanese (ja)
Other versions
JPS6211787B2 (en
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13761979A priority Critical patent/JPS5662355A/en
Publication of JPS5662355A publication Critical patent/JPS5662355A/en
Publication of JPS6211787B2 publication Critical patent/JPS6211787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make such an element as having a high strength against a short circuited load by a method wherein some burying areas are arranged below the base area and below the power supply area, and an excessive short circuited current is restricted by the resistance components present in these buried areas. CONSTITUTION:Electrostatic breakage preventive element 10 is constituted by the burying areas 12A, 12B on the semiconductor base board 11, a transistor T and an isolation area 14 etc. When a surge input A is added to the input terminal IN, it may be absorbed under an action of the transistor T. When the input terminal IN is ground connected, a short circuited current is flowed through the transistor T. The current may be restricted by the resistance Ri between the areas 12A and 12B, so that a durability against the short circuited load may be improved more.
JP13761979A 1979-10-26 1979-10-26 Electrostatic breakage preventive element Granted JPS5662355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13761979A JPS5662355A (en) 1979-10-26 1979-10-26 Electrostatic breakage preventive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13761979A JPS5662355A (en) 1979-10-26 1979-10-26 Electrostatic breakage preventive element

Publications (2)

Publication Number Publication Date
JPS5662355A true JPS5662355A (en) 1981-05-28
JPS6211787B2 JPS6211787B2 (en) 1987-03-14

Family

ID=15202902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13761979A Granted JPS5662355A (en) 1979-10-26 1979-10-26 Electrostatic breakage preventive element

Country Status (1)

Country Link
JP (1) JPS5662355A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533369A1 (en) * 1982-09-22 1984-03-23 Rca Corp PROTECTION CIRCUIT FOR INTEGRATED CIRCUIT DEVICES AND SEMICONDUCTOR STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT
JPS59159559A (en) * 1983-03-03 1984-09-10 Nec Corp Semiconductor device
JPH0234963A (en) * 1988-07-25 1990-02-05 Nec Corp Semiconductor integrated circuit
JPH0390438U (en) * 1989-12-28 1991-09-13
JP2015015288A (en) * 2013-07-03 2015-01-22 新日本無線株式会社 Electrostatic discharge damage protection circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533369A1 (en) * 1982-09-22 1984-03-23 Rca Corp PROTECTION CIRCUIT FOR INTEGRATED CIRCUIT DEVICES AND SEMICONDUCTOR STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT
JPS59159559A (en) * 1983-03-03 1984-09-10 Nec Corp Semiconductor device
JPH0425702B2 (en) * 1983-03-03 1992-05-01 Nippon Electric Co
JPH0234963A (en) * 1988-07-25 1990-02-05 Nec Corp Semiconductor integrated circuit
JPH0390438U (en) * 1989-12-28 1991-09-13
JP2015015288A (en) * 2013-07-03 2015-01-22 新日本無線株式会社 Electrostatic discharge damage protection circuit

Also Published As

Publication number Publication date
JPS6211787B2 (en) 1987-03-14

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