JPS57127336A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57127336A
JPS57127336A JP56012762A JP1276281A JPS57127336A JP S57127336 A JPS57127336 A JP S57127336A JP 56012762 A JP56012762 A JP 56012762A JP 1276281 A JP1276281 A JP 1276281A JP S57127336 A JPS57127336 A JP S57127336A
Authority
JP
Japan
Prior art keywords
terminal
peripheral circuit
tr3n
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012762A
Other languages
Japanese (ja)
Inventor
Ichiro Kobayashi
Kaoru Shibuya
Seigo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56012762A priority Critical patent/JPS57127336A/en
Publication of JPS57127336A publication Critical patent/JPS57127336A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches

Abstract

PURPOSE:To minimize the chip size for a semiconductor IC which drives a large current load, by providing a wiring in parallel between the terminal of a peripheral circuit and a terminal that flows the current to the outside from the peripheral circuit. CONSTITUTION:Each source of MOS transistors TR31-TR3n is connected in common to a terminal 6 through which the current flows out via each of independent wirings 51-5n. Thus n pieces of wirings are set in parallel between a peripheral circuit 1 and the terminal 6. As a result, no successive reduction is caused to the potential difference which can be applied between the drain and the source of the TR31-TR3n as the terminal goes further away. Accordingly, no increment is required for the dimension of each MOSTR.
JP56012762A 1981-01-30 1981-01-30 Semiconductor integrated circuit Pending JPS57127336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012762A JPS57127336A (en) 1981-01-30 1981-01-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012762A JPS57127336A (en) 1981-01-30 1981-01-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57127336A true JPS57127336A (en) 1982-08-07

Family

ID=11814405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012762A Pending JPS57127336A (en) 1981-01-30 1981-01-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57127336A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123216A (en) * 1984-11-19 1986-06-11 Toshiba Corp Semiconductor integrated circuit
JPH02230817A (en) * 1988-11-22 1990-09-13 Nec Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123216A (en) * 1984-11-19 1986-06-11 Toshiba Corp Semiconductor integrated circuit
JPH02230817A (en) * 1988-11-22 1990-09-13 Nec Corp Semiconductor integrated circuit
JP2580805B2 (en) * 1988-11-22 1997-02-12 日本電気株式会社 Semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
TW349277B (en) Semiconductor integrated circuit
GB1437024A (en) Semiconductor integrated circuit structures
DE3378446D1 (en) Integrated semiconductor circuit, comprising bipolar and mos transistors on the same chip, and method of making the same
JPS6448445A (en) Semiconductor integrated circuit device having logic macro and ram macro
HK1006492A1 (en) Semi-conductor integrated circuit including protection means
JPS6471219A (en) Buffer circuit and integrated circuit structure
EP0249988A3 (en) A master-slice integrated circuit having an improved arrangement of transistor elements for simplified wirings
DE3169127D1 (en) Input circuit for an integrated monolithic semiconductor memory using field effect transistors
DE3889584D1 (en) Output buffer for MOS integrated semiconductor circuit.
JPS57127336A (en) Semiconductor integrated circuit
JPS5433679A (en) Semiconductor intergrated circuit on insulation substrate
JPS5712574A (en) Superconductive integrated circuit chip
JPS5743453A (en) Integrated circuit
JPS5764941A (en) Semiconductor integrated circuit device
DE3164950D1 (en) INTEGRATED MOS SEMICONDUCTOR CIRCUIT
KR920001711A (en) Semiconductor integrated circuit
JPS5521131A (en) Semiconductor device
JPS57133644A (en) Semiconductor integrated circuit device
JPS6437033A (en) Manufacture of semiconductor integrated circuit device
JPS57112048A (en) Master slice type semiconductor integrated circuit device
EP0166423A3 (en) Semiconductor integrated circuit having complementary field effect transistors
JPS57187952A (en) Manufacture of semiconductor integrated circuit
JPS6450450A (en) Package for semiconductor integrated circuit
JPS6469116A (en) Delay circuit for semiconductor integrated circuit device
JPS56105385A (en) Chip selecting circuit in semiconductor device