JPS5538082A - Formation for buried layer of semiconductor device - Google Patents

Formation for buried layer of semiconductor device

Info

Publication number
JPS5538082A
JPS5538082A JP11206578A JP11206578A JPS5538082A JP S5538082 A JPS5538082 A JP S5538082A JP 11206578 A JP11206578 A JP 11206578A JP 11206578 A JP11206578 A JP 11206578A JP S5538082 A JPS5538082 A JP S5538082A
Authority
JP
Japan
Prior art keywords
film
ions
oxide film
buried layer
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11206578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129538B2 (enrdf_load_stackoverflow
Inventor
Tsuneo Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11206578A priority Critical patent/JPS5538082A/ja
Publication of JPS5538082A publication Critical patent/JPS5538082A/ja
Publication of JPS6129538B2 publication Critical patent/JPS6129538B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP11206578A 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device Granted JPS5538082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5538082A true JPS5538082A (en) 1980-03-17
JPS6129538B2 JPS6129538B2 (enrdf_load_stackoverflow) 1986-07-07

Family

ID=14577164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11206578A Granted JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538082A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162325A (ja) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS62198120A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100393962B1 (ko) * 1996-12-26 2003-11-17 주식회사 하이닉스반도체 반도체소자의제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162325A (ja) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS62198120A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100393962B1 (ko) * 1996-12-26 2003-11-17 주식회사 하이닉스반도체 반도체소자의제조방법

Also Published As

Publication number Publication date
JPS6129538B2 (enrdf_load_stackoverflow) 1986-07-07

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