JPS6129538B2 - - Google Patents

Info

Publication number
JPS6129538B2
JPS6129538B2 JP53112065A JP11206578A JPS6129538B2 JP S6129538 B2 JPS6129538 B2 JP S6129538B2 JP 53112065 A JP53112065 A JP 53112065A JP 11206578 A JP11206578 A JP 11206578A JP S6129538 B2 JPS6129538 B2 JP S6129538B2
Authority
JP
Japan
Prior art keywords
oxide film
main surface
forming
buried layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53112065A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5538082A (en
Inventor
Tsuneo Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11206578A priority Critical patent/JPS5538082A/ja
Publication of JPS5538082A publication Critical patent/JPS5538082A/ja
Publication of JPS6129538B2 publication Critical patent/JPS6129538B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP11206578A 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device Granted JPS5538082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5538082A JPS5538082A (en) 1980-03-17
JPS6129538B2 true JPS6129538B2 (enrdf_load_stackoverflow) 1986-07-07

Family

ID=14577164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11206578A Granted JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538082A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162325A (ja) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS62198120A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100393962B1 (ko) * 1996-12-26 2003-11-17 주식회사 하이닉스반도체 반도체소자의제조방법

Also Published As

Publication number Publication date
JPS5538082A (en) 1980-03-17

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