JPS5527657A - Method of manufacturing infrared ray detecting element - Google Patents
Method of manufacturing infrared ray detecting elementInfo
- Publication number
- JPS5527657A JPS5527657A JP10104878A JP10104878A JPS5527657A JP S5527657 A JPS5527657 A JP S5527657A JP 10104878 A JP10104878 A JP 10104878A JP 10104878 A JP10104878 A JP 10104878A JP S5527657 A JPS5527657 A JP S5527657A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- parts
- film
- films
- receiving faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10104878A JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10104878A JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527657A true JPS5527657A (en) | 1980-02-27 |
| JPS6111476B2 JPS6111476B2 (enExample) | 1986-04-03 |
Family
ID=14290232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10104878A Granted JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527657A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636174A (en) * | 1979-08-31 | 1981-04-09 | Thomson Csf | Semiconductor photodetector device and method of manufacturing same |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
| US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
| US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| FR2990562A1 (fr) * | 2012-05-09 | 2013-11-15 | Sagem Defense Securite | Procede de realisation d'un capteur infrarouge insb |
-
1978
- 1978-08-19 JP JP10104878A patent/JPS5527657A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636174A (en) * | 1979-08-31 | 1981-04-09 | Thomson Csf | Semiconductor photodetector device and method of manufacturing same |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
| US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
| US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| FR2990562A1 (fr) * | 2012-05-09 | 2013-11-15 | Sagem Defense Securite | Procede de realisation d'un capteur infrarouge insb |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111476B2 (enExample) | 1986-04-03 |
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