JPS6111476B2 - - Google Patents

Info

Publication number
JPS6111476B2
JPS6111476B2 JP53101048A JP10104878A JPS6111476B2 JP S6111476 B2 JPS6111476 B2 JP S6111476B2 JP 53101048 A JP53101048 A JP 53101048A JP 10104878 A JP10104878 A JP 10104878A JP S6111476 B2 JPS6111476 B2 JP S6111476B2
Authority
JP
Japan
Prior art keywords
light
mesa
film
photoresist film
receiving surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53101048A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5527657A (en
Inventor
Shoji Doi
Hiroshi Takigawa
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10104878A priority Critical patent/JPS5527657A/ja
Publication of JPS5527657A publication Critical patent/JPS5527657A/ja
Publication of JPS6111476B2 publication Critical patent/JPS6111476B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP10104878A 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element Granted JPS5527657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10104878A JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10104878A JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Publications (2)

Publication Number Publication Date
JPS5527657A JPS5527657A (en) 1980-02-27
JPS6111476B2 true JPS6111476B2 (enExample) 1986-04-03

Family

ID=14290232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10104878A Granted JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Country Status (1)

Country Link
JP (1) JPS5527657A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464563A1 (fr) * 1979-08-31 1981-03-06 Thomson Csf Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
JPH1131850A (ja) 1997-07-10 1999-02-02 Nec Corp 半導体装置及びその製造方法
FR2990562B1 (fr) * 2012-05-09 2015-03-06 Sagem Defense Securite Procede de realisation d'un capteur infrarouge insb

Also Published As

Publication number Publication date
JPS5527657A (en) 1980-02-27

Similar Documents

Publication Publication Date Title
JPH027417B2 (enExample)
TWI649865B (zh) 影像感測器及其製造方法
JPS6111476B2 (enExample)
GB2261323A (en) Infrared imaging device
JP2541458B2 (ja) 赤外線センサおよびその製造方法
JPH09331052A (ja) 裏面照射型固体撮像素子およびその製造方法
JPS6116580A (ja) 光検知半導体装置
CN111244193A (zh) 一种二极管、探测器及探测器的制作方法
JPH0513741A (ja) 半導体光検出装置
JP2001044400A (ja) 半導体赤外線検出素子
JPH0454969B2 (enExample)
JPS61201461A (ja) 光センサ素子の製造方法
JP2780294B2 (ja) 固体撮像素子
JP2502706B2 (ja) 焦電型赤外線固体撮像装置
JPS62193277A (ja) 固体撮像装置
JPH03268463A (ja) 赤外線検知素子の製造方法
JP2647954B2 (ja) 半導体受光装置の形成方法
JPH02278767A (ja) 固体撮像装置
JPH06125071A (ja) 固体撮像素子及びその製造方法
JPH0439791B2 (enExample)
JPS638633B2 (enExample)
JPS5497390A (en) Manufacture of semiconductor photo detector
JPH0272665A (ja) 受光素子の製造方法
JPS5990468A (ja) 固体赤外撮像素子
JPS58223971A (ja) 固体撮像素子