JPS5527657A - Method of manufacturing infrared ray detecting element - Google Patents
Method of manufacturing infrared ray detecting elementInfo
- Publication number
- JPS5527657A JPS5527657A JP10104878A JP10104878A JPS5527657A JP S5527657 A JPS5527657 A JP S5527657A JP 10104878 A JP10104878 A JP 10104878A JP 10104878 A JP10104878 A JP 10104878A JP S5527657 A JPS5527657 A JP S5527657A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- parts
- film
- films
- receiving faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To make the sensitivity of detector elements equal and obtain pictures which indicate the temperature distribution of objects accurately by controlling the area of the light receiving faces of the elements at a constant value and forming electrodes around the light receiving faces uniformly.
CONSTITUTION: An n-type layer 2 is formed on a p-type InSb substrate 1 by the thermal diffusion of n-type impurities, and further, a photoresist film 3 is formed. Next, the resist film 3 is removed leaving predetermined light receiving face forming regions alone, and these parts are etched as shown by B and are separated as mesa types. Next, on these B parts, oxidized films 4 are formed by anodic oxidation, and further, SiO vapor deposit films 5 are formed to strengthen the films. Next, after removing the resist film 3 once, the film is formed again all over the surface, and after exposing except predetermined electrode forming parts L, the parts L are removed. Then, an In film 7 is vapor deposited, the photoresist film 6 in the E, F, G, H, K regions is removed and electrodes 7 are formed around the light receiving faces 8.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10104878A JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10104878A JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5527657A true JPS5527657A (en) | 1980-02-27 |
JPS6111476B2 JPS6111476B2 (en) | 1986-04-03 |
Family
ID=14290232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10104878A Granted JPS5527657A (en) | 1978-08-19 | 1978-08-19 | Method of manufacturing infrared ray detecting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527657A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636174A (en) * | 1979-08-31 | 1981-04-09 | Thomson Csf | Semiconductor photodetector device and method of manufacturing same |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
FR2990562A1 (en) * | 2012-05-09 | 2013-11-15 | Sagem Defense Securite | Method for manufacturing sensitive element of infra-red sensor, from indium antimonide wafer, used as thermal detector in binocular, involves etching surface to depth greater than thickness, and covering surface by passivation layer |
-
1978
- 1978-08-19 JP JP10104878A patent/JPS5527657A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636174A (en) * | 1979-08-31 | 1981-04-09 | Thomson Csf | Semiconductor photodetector device and method of manufacturing same |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
FR2990562A1 (en) * | 2012-05-09 | 2013-11-15 | Sagem Defense Securite | Method for manufacturing sensitive element of infra-red sensor, from indium antimonide wafer, used as thermal detector in binocular, involves etching surface to depth greater than thickness, and covering surface by passivation layer |
Also Published As
Publication number | Publication date |
---|---|
JPS6111476B2 (en) | 1986-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5492175A (en) | Manufacture of semiconductor device | |
JPS5588382A (en) | Preparation of tunnel junction type josephson element | |
JPS5527657A (en) | Method of manufacturing infrared ray detecting element | |
JPS57154855A (en) | Manufacture of semiconductor device | |
JPS5596640A (en) | Method of forming glass film on semiconductor substrate | |
JPS55113379A (en) | Method of fabrication for semiconductor pressure- sensitive element | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS57107040A (en) | Manufacture of semiconductor device | |
JPS54127279A (en) | Impurity diffusing method | |
JPS5572052A (en) | Preparation of semiconductor device | |
JPS5633841A (en) | Manufacture of semiconductor device | |
JPS5484986A (en) | Production of infrared-rays detector element | |
JPS5550629A (en) | Manufacture of mesa-type semiconductor device | |
JPS5468179A (en) | Forming method of wiring layer having minute interval | |
JPS57172780A (en) | Manufacture of image sensor | |
JPS55115337A (en) | Manufacture of semiconductor device | |
JPH03268463A (en) | Manufacture of infrared detection element | |
JPS6411325A (en) | Semiconductor device and manufacture thereof | |
JPS6461927A (en) | Manufacture of semiconductor device | |
JPS54157096A (en) | Production method of infrared ray detection element | |
JPS5529174A (en) | Manufacturing of triac | |
JPS5570046A (en) | Forming method of oxide film | |
JPS57199231A (en) | Manufacture of semiconductor device | |
JPS5567134A (en) | Method for manufacturing electrode of semiconductor device | |
JPS54115066A (en) | Manufacture for semiconductor device |