JPS5527657A - Method of manufacturing infrared ray detecting element - Google Patents

Method of manufacturing infrared ray detecting element

Info

Publication number
JPS5527657A
JPS5527657A JP10104878A JP10104878A JPS5527657A JP S5527657 A JPS5527657 A JP S5527657A JP 10104878 A JP10104878 A JP 10104878A JP 10104878 A JP10104878 A JP 10104878A JP S5527657 A JPS5527657 A JP S5527657A
Authority
JP
Japan
Prior art keywords
light receiving
parts
film
films
receiving faces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10104878A
Other languages
Japanese (ja)
Other versions
JPS6111476B2 (en
Inventor
Shoji Doi
Hiroshi Takigawa
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10104878A priority Critical patent/JPS5527657A/en
Publication of JPS5527657A publication Critical patent/JPS5527657A/en
Publication of JPS6111476B2 publication Critical patent/JPS6111476B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To make the sensitivity of detector elements equal and obtain pictures which indicate the temperature distribution of objects accurately by controlling the area of the light receiving faces of the elements at a constant value and forming electrodes around the light receiving faces uniformly.
CONSTITUTION: An n-type layer 2 is formed on a p-type InSb substrate 1 by the thermal diffusion of n-type impurities, and further, a photoresist film 3 is formed. Next, the resist film 3 is removed leaving predetermined light receiving face forming regions alone, and these parts are etched as shown by B and are separated as mesa types. Next, on these B parts, oxidized films 4 are formed by anodic oxidation, and further, SiO vapor deposit films 5 are formed to strengthen the films. Next, after removing the resist film 3 once, the film is formed again all over the surface, and after exposing except predetermined electrode forming parts L, the parts L are removed. Then, an In film 7 is vapor deposited, the photoresist film 6 in the E, F, G, H, K regions is removed and electrodes 7 are formed around the light receiving faces 8.
COPYRIGHT: (C)1980,JPO&Japio
JP10104878A 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element Granted JPS5527657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10104878A JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10104878A JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Publications (2)

Publication Number Publication Date
JPS5527657A true JPS5527657A (en) 1980-02-27
JPS6111476B2 JPS6111476B2 (en) 1986-04-03

Family

ID=14290232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10104878A Granted JPS5527657A (en) 1978-08-19 1978-08-19 Method of manufacturing infrared ray detecting element

Country Status (1)

Country Link
JP (1) JPS5527657A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636174A (en) * 1979-08-31 1981-04-09 Thomson Csf Semiconductor photodetector device and method of manufacturing same
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US6194312B1 (en) 1997-07-10 2001-02-27 Nec Corporation Semiconductor device and method of manufacturing the same
FR2990562A1 (en) * 2012-05-09 2013-11-15 Sagem Defense Securite Method for manufacturing sensitive element of infra-red sensor, from indium antimonide wafer, used as thermal detector in binocular, involves etching surface to depth greater than thickness, and covering surface by passivation layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636174A (en) * 1979-08-31 1981-04-09 Thomson Csf Semiconductor photodetector device and method of manufacturing same
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US6194312B1 (en) 1997-07-10 2001-02-27 Nec Corporation Semiconductor device and method of manufacturing the same
FR2990562A1 (en) * 2012-05-09 2013-11-15 Sagem Defense Securite Method for manufacturing sensitive element of infra-red sensor, from indium antimonide wafer, used as thermal detector in binocular, involves etching surface to depth greater than thickness, and covering surface by passivation layer

Also Published As

Publication number Publication date
JPS6111476B2 (en) 1986-04-03

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