JPS55166925A - Application of metal film on semiconductor substrate - Google Patents
Application of metal film on semiconductor substrateInfo
- Publication number
- JPS55166925A JPS55166925A JP7483379A JP7483379A JPS55166925A JP S55166925 A JPS55166925 A JP S55166925A JP 7483379 A JP7483379 A JP 7483379A JP 7483379 A JP7483379 A JP 7483379A JP S55166925 A JPS55166925 A JP S55166925A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- surface oxide
- etching process
- resist pattern
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7483379A JPS55166925A (en) | 1979-06-13 | 1979-06-13 | Application of metal film on semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7483379A JPS55166925A (en) | 1979-06-13 | 1979-06-13 | Application of metal film on semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55166925A true JPS55166925A (en) | 1980-12-26 |
Family
ID=13558728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7483379A Pending JPS55166925A (en) | 1979-06-13 | 1979-06-13 | Application of metal film on semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55166925A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956731A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | 金属膜のエツチング方法 |
US6534789B2 (en) | 1998-07-31 | 2003-03-18 | Fujitsu Limited | Thin film transistor matrix having TFT with LDD regions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5287985A (en) * | 1976-01-19 | 1977-07-22 | Mitsubishi Electric Corp | Plasma etching method |
JPS5421278A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Plasma etching method |
-
1979
- 1979-06-13 JP JP7483379A patent/JPS55166925A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5287985A (en) * | 1976-01-19 | 1977-07-22 | Mitsubishi Electric Corp | Plasma etching method |
JPS5421278A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Plasma etching method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956731A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | 金属膜のエツチング方法 |
US6534789B2 (en) | 1998-07-31 | 2003-03-18 | Fujitsu Limited | Thin film transistor matrix having TFT with LDD regions |
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