JPS55165652A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55165652A JPS55165652A JP7387979A JP7387979A JPS55165652A JP S55165652 A JPS55165652 A JP S55165652A JP 7387979 A JP7387979 A JP 7387979A JP 7387979 A JP7387979 A JP 7387979A JP S55165652 A JPS55165652 A JP S55165652A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- polycrystalline
- make
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To surely prevent multilayer wirings from snapping at their edges, shorten wiring intervals and attain a high degree of integration, by utilizing a lift-off method to make the curves of corvers of wiring unsharp. CONSTITUTION:A doped polycrystalline Si film 3 and an Al film 4 are laminated on an SiO2 film on an Si substrate 1 provided with an element. The films 3, 4 are ion-etched under CCl4 gas to make openings 51, 52. The side faces of the polycrystalline Si film 3 are then plasma-etched under CF4 gas to make Al eaves. The SiO2 film is on a hole section of the surface of the substrate is etched. When an Al film 6 is evaporated obliquely downwards, its edges are made unsharp due to the eaves. The polycrystalline Si 3 is removed by CF4 gas plasma etching to provide desired wirings 61, 62. A high-concentration PSG 7 is coated. An opening is made. An Al wiring layer 8 is evaporated for completion. Since dry etching is used except for previous treatment for the Al evaporation and the wiring intervals are greatly shortened by the side face etching, a high degree of integration is enabled and snapping is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7387979A JPS55165652A (en) | 1979-06-12 | 1979-06-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7387979A JPS55165652A (en) | 1979-06-12 | 1979-06-12 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55165652A true JPS55165652A (en) | 1980-12-24 |
Family
ID=13530921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7387979A Pending JPS55165652A (en) | 1979-06-12 | 1979-06-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55165652A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58500680A (en) * | 1981-05-04 | 1983-04-28 | モトロ−ラ・インコ−ポレ−テツド | Semiconductor device with low resistance synthetic metal conductor and method for manufacturing the same |
-
1979
- 1979-06-12 JP JP7387979A patent/JPS55165652A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58500680A (en) * | 1981-05-04 | 1983-04-28 | モトロ−ラ・インコ−ポレ−テツド | Semiconductor device with low resistance synthetic metal conductor and method for manufacturing the same |
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