JPS5515939A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS5515939A JPS5515939A JP8675978A JP8675978A JPS5515939A JP S5515939 A JPS5515939 A JP S5515939A JP 8675978 A JP8675978 A JP 8675978A JP 8675978 A JP8675978 A JP 8675978A JP S5515939 A JPS5515939 A JP S5515939A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- crucible
- single crystal
- melt
- housed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000008710 crystal-8 Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8675978A JPS5515939A (en) | 1978-07-18 | 1978-07-18 | Production of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8675978A JPS5515939A (en) | 1978-07-18 | 1978-07-18 | Production of single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5515939A true JPS5515939A (en) | 1980-02-04 |
| JPS6116757B2 JPS6116757B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Family
ID=13895664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8675978A Granted JPS5515939A (en) | 1978-07-18 | 1978-07-18 | Production of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5515939A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130329296A1 (en) * | 2012-06-12 | 2013-12-12 | Hon Hai Precision Industry Co., Ltd. | Device for growing sapphire ingot at high speed and sapphire cover glass having excellent optical properties |
| CN110241456A (zh) * | 2019-07-11 | 2019-09-17 | 北方民族大学 | 助溶剂法生长均匀近化学计量比钽酸锂晶体的方法 |
-
1978
- 1978-07-18 JP JP8675978A patent/JPS5515939A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130329296A1 (en) * | 2012-06-12 | 2013-12-12 | Hon Hai Precision Industry Co., Ltd. | Device for growing sapphire ingot at high speed and sapphire cover glass having excellent optical properties |
| CN110241456A (zh) * | 2019-07-11 | 2019-09-17 | 北方民族大学 | 助溶剂法生长均匀近化学计量比钽酸锂晶体的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6116757B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| UA7080A1 (uk) | Спосіб одержання кристалічного торасеміду | |
| JPS5556098A (en) | Method and apparatus for producing si single crystal rod | |
| JPS5515939A (en) | Production of single crystal | |
| JPS549174A (en) | Method of producing seingle crystal | |
| JPS55158196A (en) | Manufacture of single crystal | |
| IT1178785B (it) | Procedimento per la preparazione di materiali policristallini ed apparechiatura atta alla sua realizzazione | |
| JPS55126597A (en) | Single crystal growing method | |
| JPS5688895A (en) | Growth of single crystal | |
| JPS54128988A (en) | Preparation of single crystal | |
| JPS5534115A (en) | Crystallization method | |
| JPS57183393A (en) | Apparatus for growing single crystal | |
| JPS5413477A (en) | Continuous growing apparatus for single crystal | |
| JPS5711896A (en) | Production of single crystal | |
| JPS57118087A (en) | Manufacture of single crystal | |
| FI872888L (fi) | Anordning foer framstaellning av enkristall foer halvledare. | |
| JPS55140800A (en) | Crucible for crystal growing crucible device | |
| JPS57118091A (en) | Manufacturing apparatus for beltlike silicon crystal | |
| JPS5761696A (en) | Manufacturing of single crystal | |
| JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
| JPS5560092A (en) | Production of single crystal | |
| JPS562602A (en) | Heat treatment of amorphous magnetic element | |
| HOLLAND | Apparatus and method for heating a material in a transparent ampoule(crystal growth)[Patent] | |
| JPS51136581A (en) | Process for production of a semi-conductor crystal | |
| JPS53149875A (en) | Preparing apparatus for semiconductor crystal | |
| JPS57129896A (en) | Liquid phase epitaxial growing apparatus |