JPS6116757B2 - - Google Patents

Info

Publication number
JPS6116757B2
JPS6116757B2 JP8675978A JP8675978A JPS6116757B2 JP S6116757 B2 JPS6116757 B2 JP S6116757B2 JP 8675978 A JP8675978 A JP 8675978A JP 8675978 A JP8675978 A JP 8675978A JP S6116757 B2 JPS6116757 B2 JP S6116757B2
Authority
JP
Japan
Prior art keywords
single crystal
crucible
lithium tantalate
crystal
tantalate single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8675978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5515939A (en
Inventor
Tsuguo Fukuda
Toshiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP8675978A priority Critical patent/JPS5515939A/ja
Publication of JPS5515939A publication Critical patent/JPS5515939A/ja
Publication of JPS6116757B2 publication Critical patent/JPS6116757B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP8675978A 1978-07-18 1978-07-18 Production of single crystal Granted JPS5515939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8675978A JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8675978A JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Publications (2)

Publication Number Publication Date
JPS5515939A JPS5515939A (en) 1980-02-04
JPS6116757B2 true JPS6116757B2 (enrdf_load_stackoverflow) 1986-05-01

Family

ID=13895664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8675978A Granted JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5515939A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201350632A (zh) * 2012-06-12 2013-12-16 Wcube Co Ltd 藍寶石製造裝置及鏡頭保護玻璃
CN110241456A (zh) * 2019-07-11 2019-09-17 北方民族大学 助溶剂法生长均匀近化学计量比钽酸锂晶体的方法

Also Published As

Publication number Publication date
JPS5515939A (en) 1980-02-04

Similar Documents

Publication Publication Date Title
US4944925A (en) Apparatus for producing single crystals
JP2973917B2 (ja) 単結晶引き上げ方法
JPS6116757B2 (enrdf_load_stackoverflow)
JP3465853B2 (ja) ZnSeバルク単結晶の製造方法
JPH07187880A (ja) 酸化物単結晶の製造方法
CN115558994A (zh) 一种卤化物的提纯方法
JP2868204B2 (ja) 四ほう酸リチウム単結晶の製造装置
JPH0616926Y2 (ja) 単結晶引き上げ用石英ガラスルツボ
JPS6126519B2 (enrdf_load_stackoverflow)
JPH04187585A (ja) 結晶成長装置
JP2733898B2 (ja) 化合物半導体単結晶の製造方法
JP2855408B2 (ja) 単結晶成長装置
JP2809363B2 (ja) 四ほう酸リチウム単結晶の製造方法
JPH0258239B2 (enrdf_load_stackoverflow)
JPH11274537A (ja) 大粒径多結晶シリコンの製造法
JP2739554B2 (ja) 四硼酸リチウム結晶の製造方法
JP3651855B2 (ja) CdTe結晶の製造方法
JP2024528341A (ja) 単結晶シリコンロッドの製造デバイスおよび製造方法
JPS63270385A (ja) 酸化物単結晶の製造方法
JPH061692A (ja) 化合物半導体単結晶の製造装置
JPH0346433B2 (enrdf_load_stackoverflow)
JP2640615B2 (ja) 圧電性結晶の製造方法
JPH05246799A (ja) 四ほう酸リチウム単結晶の製造方法
JPH01167295A (ja) 化合物半導体単結晶成長用るつぼ
JPS5997591A (ja) 単結晶育成法および装置