JPS55158631A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55158631A JPS55158631A JP6697679A JP6697679A JPS55158631A JP S55158631 A JPS55158631 A JP S55158631A JP 6697679 A JP6697679 A JP 6697679A JP 6697679 A JP6697679 A JP 6697679A JP S55158631 A JPS55158631 A JP S55158631A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- boats
- becoming
- groove
- evaporating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55158631A true JPS55158631A (en) | 1980-12-10 |
| JPS6138850B2 JPS6138850B2 (https=) | 1986-09-01 |
Family
ID=13331554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6697679A Granted JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158631A (https=) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130477A (en) * | 1981-02-05 | 1982-08-12 | Nec Corp | Manufacture of field-effect transistor |
| JPS57166085A (en) * | 1981-04-03 | 1982-10-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57163791U (https=) * | 1981-04-10 | 1982-10-15 | ||
| JPS5821877A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58162069A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2001237198A (ja) * | 2000-02-23 | 2001-08-31 | Nec Kansai Ltd | リフトオフ法による電極形成のための蒸着方法 |
| JP2004342698A (ja) * | 2003-05-13 | 2004-12-02 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
-
1979
- 1979-05-30 JP JP6697679A patent/JPS55158631A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130477A (en) * | 1981-02-05 | 1982-08-12 | Nec Corp | Manufacture of field-effect transistor |
| JPS57166085A (en) * | 1981-04-03 | 1982-10-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57163791U (https=) * | 1981-04-10 | 1982-10-15 | ||
| JPS5821877A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58162069A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2001237198A (ja) * | 2000-02-23 | 2001-08-31 | Nec Kansai Ltd | リフトオフ法による電極形成のための蒸着方法 |
| JP2004342698A (ja) * | 2003-05-13 | 2004-12-02 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6138850B2 (https=) | 1986-09-01 |
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