JPS6138850B2 - - Google Patents
Info
- Publication number
- JPS6138850B2 JPS6138850B2 JP54066976A JP6697679A JPS6138850B2 JP S6138850 B2 JPS6138850 B2 JP S6138850B2 JP 54066976 A JP54066976 A JP 54066976A JP 6697679 A JP6697679 A JP 6697679A JP S6138850 B2 JPS6138850 B2 JP S6138850B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- vapor deposition
- deposition source
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55158631A JPS55158631A (en) | 1980-12-10 |
| JPS6138850B2 true JPS6138850B2 (https=) | 1986-09-01 |
Family
ID=13331554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6697679A Granted JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158631A (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130477A (en) * | 1981-02-05 | 1982-08-12 | Nec Corp | Manufacture of field-effect transistor |
| JPS57166085A (en) * | 1981-04-03 | 1982-10-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6246320Y2 (https=) * | 1981-04-10 | 1987-12-12 | ||
| JPS5821877A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58162069A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP3460976B2 (ja) * | 2000-02-23 | 2003-10-27 | 関西日本電気株式会社 | リフトオフ法による電極形成のための蒸着方法 |
| JP4140440B2 (ja) * | 2003-05-13 | 2008-08-27 | 住友電気工業株式会社 | 半導体装置の製造方法 |
-
1979
- 1979-05-30 JP JP6697679A patent/JPS55158631A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55158631A (en) | 1980-12-10 |
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