JPS56167375A - Manufacture of multiple semiconductor element - Google Patents
Manufacture of multiple semiconductor elementInfo
- Publication number
- JPS56167375A JPS56167375A JP7108280A JP7108280A JPS56167375A JP S56167375 A JPS56167375 A JP S56167375A JP 7108280 A JP7108280 A JP 7108280A JP 7108280 A JP7108280 A JP 7108280A JP S56167375 A JPS56167375 A JP S56167375A
- Authority
- JP
- Japan
- Prior art keywords
- zns
- multiple semiconductor
- substrate
- photoetching
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001259 photo etching Methods 0.000 abstract 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To form a gate electrode and its vicinity by photoetching, by layering an insulating film and metal films which do not contain constituent elements on a substrate of the multiple semiconductor element and removing them by selective etching liquid. CONSTITUTION:ZnS 12 and Ni 13 are evaporated on the HgCdTe substrate 11 and a resist mask 14 is applied. Said Ni 13 is selectively removed be FeCl3. ZnS 15 is layered, and a resist mask 16 is applied. The liquid wherein K2Cr2O7 is dissolved in H2SO4 is diluted by pure water whose weight ratio is about 10 times. Said ZnS 15 is selectively etched by resulting liquid. Finally a wiring Ni film 17 is deposited by using an evaporation mask. In this method, the gate electrode and the nearby insulating film are precisely patterned by the photoetching, and the planar type element having the desired characteristics can be formed with the multiple semiconductor as the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7108280A JPS56167375A (en) | 1980-05-27 | 1980-05-27 | Manufacture of multiple semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7108280A JPS56167375A (en) | 1980-05-27 | 1980-05-27 | Manufacture of multiple semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56167375A true JPS56167375A (en) | 1981-12-23 |
Family
ID=13450243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7108280A Pending JPS56167375A (en) | 1980-05-27 | 1980-05-27 | Manufacture of multiple semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680733A (en) * | 1992-11-19 | 1997-10-28 | A And E Co., Ltd. | Support body for outdoor equipment |
-
1980
- 1980-05-27 JP JP7108280A patent/JPS56167375A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680733A (en) * | 1992-11-19 | 1997-10-28 | A And E Co., Ltd. | Support body for outdoor equipment |
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