JPS56140681A - Manufacture of photoelectric conversion element - Google Patents
Manufacture of photoelectric conversion elementInfo
- Publication number
- JPS56140681A JPS56140681A JP4336980A JP4336980A JPS56140681A JP S56140681 A JPS56140681 A JP S56140681A JP 4336980 A JP4336980 A JP 4336980A JP 4336980 A JP4336980 A JP 4336980A JP S56140681 A JPS56140681 A JP S56140681A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoelectric conversion
- built
- etched
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 229910017000 As2Se3 Inorganic materials 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To simplify the manufacture by reducing etching processes and in addition, to prevent the performance from being fallen by obtaining the photoelectric conversion element without a process to directly etch a photoelectric conversion layer. CONSTITUTION:In2O3 is evaporated on a soda glass plate 1 to form a desired electrode pattern. Al 3 is layer-built to be applied with a resist mask 5, and the Al is etched to form a groove 6. Then, a layer 8 large and a layer 9 small in a band width are layer-built by evaporation in the combination of CdS-CdTe. As2Se3 10 is formed on the layers 8, 9 to further improve a photoelectric characteristic. Then, the Al 3 is etched to make an Al electrodes 11 be attached. With this construction, the manufacturing process is simplified because the laminated layers are not individually etched, and since the photoelectric conversion layer is layer-built by an evaporating method, a long size or a large area can easily be made. In addition, since a chemical etching process is not directly applied to the photoelectric conversion layers. an etching liquid is contaminated and the excellent characteristic can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4336980A JPS56140681A (en) | 1980-04-02 | 1980-04-02 | Manufacture of photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4336980A JPS56140681A (en) | 1980-04-02 | 1980-04-02 | Manufacture of photoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56140681A true JPS56140681A (en) | 1981-11-04 |
Family
ID=12661921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4336980A Pending JPS56140681A (en) | 1980-04-02 | 1980-04-02 | Manufacture of photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140681A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59156242A (en) * | 1983-02-28 | 1984-09-05 | Kao Corp | Food oil composition |
-
1980
- 1980-04-02 JP JP4336980A patent/JPS56140681A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59156242A (en) * | 1983-02-28 | 1984-09-05 | Kao Corp | Food oil composition |
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