JPS55130182A - P-n hetero junction solar battery - Google Patents
P-n hetero junction solar batteryInfo
- Publication number
- JPS55130182A JPS55130182A JP3703779A JP3703779A JPS55130182A JP S55130182 A JPS55130182 A JP S55130182A JP 3703779 A JP3703779 A JP 3703779A JP 3703779 A JP3703779 A JP 3703779A JP S55130182 A JPS55130182 A JP S55130182A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- solar battery
- junction solar
- hetero junction
- type silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title abstract 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 3
- 229920001197 polyacetylene Polymers 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3703779A JPS55130182A (en) | 1979-03-30 | 1979-03-30 | P-n hetero junction solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3703779A JPS55130182A (en) | 1979-03-30 | 1979-03-30 | P-n hetero junction solar battery |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55130182A true JPS55130182A (en) | 1980-10-08 |
JPS6140153B2 JPS6140153B2 (enrdf_load_stackoverflow) | 1986-09-08 |
Family
ID=12486411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3703779A Granted JPS55130182A (en) | 1979-03-30 | 1979-03-30 | P-n hetero junction solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130182A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164579A (en) * | 1981-04-03 | 1982-10-09 | Toray Ind Inc | High performance polyacetylene semiconductor element |
US4873556A (en) * | 1985-05-07 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | Hetero-junction device |
JP2006073856A (ja) * | 2004-09-03 | 2006-03-16 | Konica Minolta Medical & Graphic Inc | 光電変換素子および放射線画像検出器 |
JP2011046565A (ja) * | 2009-08-27 | 2011-03-10 | Sharp Corp | 単結晶シリコンインゴット、単結晶シリコンウェハ、単結晶シリコン太陽電池セル、および単結晶シリコンインゴットの製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01288359A (ja) * | 1988-05-17 | 1989-11-20 | Hanshin Kasei Kogyo Kk | 水溶性固形物の収容具とこれを接続したシャワー装置 |
-
1979
- 1979-03-30 JP JP3703779A patent/JPS55130182A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164579A (en) * | 1981-04-03 | 1982-10-09 | Toray Ind Inc | High performance polyacetylene semiconductor element |
US4873556A (en) * | 1985-05-07 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | Hetero-junction device |
JP2006073856A (ja) * | 2004-09-03 | 2006-03-16 | Konica Minolta Medical & Graphic Inc | 光電変換素子および放射線画像検出器 |
JP2011046565A (ja) * | 2009-08-27 | 2011-03-10 | Sharp Corp | 単結晶シリコンインゴット、単結晶シリコンウェハ、単結晶シリコン太陽電池セル、および単結晶シリコンインゴットの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6140153B2 (enrdf_load_stackoverflow) | 1986-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2363898A1 (fr) | Pile solaire et procede pour la fabrication de celle-ci | |
FR2549642B1 (fr) | Cellule solaire | |
JPS51113481A (en) | Semiconductor device | |
GB1487808A (en) | Solar cells | |
JPS55130182A (en) | P-n hetero junction solar battery | |
JPS5473587A (en) | Thin film solar battery device | |
JPS54161887A (en) | Schottky diode containing guard ring and its manufacture | |
JPS5745273A (en) | Semiconductor device | |
JPS5694674A (en) | Thin-film solar cell | |
JPS55130161A (en) | Fabricating method of p-n hetero junction element | |
JPS55146982A (en) | P-n hetero junction type solar battery | |
JPS5356988A (en) | Photovoltaic element | |
JPS56107588A (en) | Semiconductor light emitting element | |
JPS52124888A (en) | Production of solar battery | |
JPS55160475A (en) | Amorphous thin film solar battery | |
JPS55162223A (en) | Semiconductor device and its preparation | |
JPS5378796A (en) | Solar battery | |
JPS55158680A (en) | Solar cell and manufacture thereof | |
JPS5679479A (en) | Photoelectric conversion device | |
JPS55141766A (en) | Manufacturing of semiconductor light position detector | |
JPS55153330A (en) | Manufacture of semiconductor device | |
JPS56138962A (en) | Photoelectric converter | |
JPS5680178A (en) | Gaas solar cell | |
JPS55154780A (en) | P-n hetero junction type solar battery | |
JPS54118781A (en) | Planar-type diode |